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Mostrati risultati da 1 a 20 di 107
Titolo Data di pubblicazione Autore(i) File
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices 1-gen-1994 L., Selmi; A., Pieracci; M., Lanzoni; Pavesi, Maura; R., Bez; E., Sangiorgi
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 1-gen-1994 G., Berthold; E., Zanoni; Manfredi, Manfredo; Pavesi, Maura; C., Canali; J. A., del Alamo; S., Bahl
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 1-gen-1995 Menozzi, Roberto; Cova, Paolo; A., Pisano; F., Fantini; Pavesi, Maura; AND P., Conti
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs 1-gen-1995 L., Selmi; Pavesi, Maura; H. S., Wong; A., Acovic; E., Sangiorgi
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 1-gen-1995 G., Berthold; E., Zanoni; C., Canali; Pavesi, Maura; M., Pecchini; Manfredi, Manfredo; S. R., Bahl; J. A., del Alamo
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 1-gen-1996 G., Meneghesso; Manfredi, Manfredo; Pavesi, Maura; U., Auer; P., Ellrodt; W., Prost; F. J., Tegude; C., Canali; E., Zanoni
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 1-gen-1996 G., Meneghesso; A., Mion; A., Neviani; M., Matloubian; J., Brown; M., Hafizi; T., Liu; C., Canali; Pavesi, Maura; Manfredi, Manfredo; E., Zanoni
DC and RF instability of GaAs-based PHEMTs due to hot electrons 1-gen-1996 Menozzi, Roberto; Borgarino, M; Cova, Paolo; Baeyens, Y; Pavesi, Maura; Fantini, F.
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 1-gen-1997 G., Meneghesso; A., Neviani; Pavesi, Maura; M., Hurt; W. C. B., Peatman; M., Shur; C., Canali; E., Zanoni
A study of hot-electron degradation effects in pseudomorphic HEMTs 1-gen-1997 Cova, P; Menozzi, R; Fantini, F; Pavesi, M; Meneghesso, G
Light emission measurements: a promising tool to identify hot carrier phenomena 1-gen-1997 G., Meneghesso; Pavesi, Maura; S., Pavesi
A study of hot electron degradation effects in pseudomorphic HEMTs 1-gen-1997 Cova, Paolo; Menozzi, Roberto; F., Fantini; Pavesi, Maura; G., Meneghesso
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 1-gen-1997 G., Meneghesso; A., Mion; Y., Haddab; Pavesi, Maura; Manfredi, Manfredo; C., Canali; E., Zanoni
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 1-gen-1998 G., Meneghesso; A., Di Carlo; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni
Verification of electron distribution in silicon by means of hot-carrier luminescence measurements 1-gen-1998 L., Selmi; M., Mastrapasqua; D. M., Boulin; J. D., Bude; Pavesi, Maura; E., Sangiorgi; M. R., Pinto
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 1-gen-1998 Cova, Paolo; Menozzi, Roberto; Pavesi, Maura; S., Pavesi; M., Manfredi; AND F., Fantini
Monitoring hot-carrier degradation in SOI MOSFET’s by hot-carrier luminescence techniques 1-gen-1998 L., Selmi; Pavesi, Maura; H. S. P., Wong; A., Acovic; E., Sangiorgi
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 1-gen-1998 Menozzi, Roberto; Pavesi, Maura; Manfredi, Manfredo; C., Ghezzi; C., Lanzieri; M., Peroni; C., Canali
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 1-gen-1998 G., Meneghesso; T., Grave; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni
Off-State Breakdown in GaAs Power HFETs 1-gen-1999 Cova, Paolo; Menozzi, Roberto; D., Dieci; C., Canali; Pavesi, Maura; G., Meneghesso
Mostrati risultati da 1 a 20 di 107
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