We show how light emission in modern submicrometric semiconductor devices can be used to extract much information about microscopic mechanisms (high energy carrier related phenomena: impact ionization, real space transfer, radiative energy loss mechanisms) and how they depend on device bias voltages and temperature. From emitted light analysis we obtained a clear evidence of impact ionization in the studied devices, a satisfactory evaluation of the effective temperature of carriers, a measurement of energy band gap of the channel semiconductor material.
Light emission measurements: a promising tool to identify hot carrier phenomena / G., Meneghesso; Pavesi, Maura; S., Pavesi. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - 164:2(1997), pp. 837-843. [10.1002/1521-396X(199712)164:2<837::AID-PSSA837>3.0.CO;2-3]
Light emission measurements: a promising tool to identify hot carrier phenomena
PAVESI, Maura;
1997-01-01
Abstract
We show how light emission in modern submicrometric semiconductor devices can be used to extract much information about microscopic mechanisms (high energy carrier related phenomena: impact ionization, real space transfer, radiative energy loss mechanisms) and how they depend on device bias voltages and temperature. From emitted light analysis we obtained a clear evidence of impact ionization in the studied devices, a satisfactory evaluation of the effective temperature of carriers, a measurement of energy band gap of the channel semiconductor material.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
