Sfoglia per Autore
Electroluminescence analysis of HFET’s breakdown
1999-01-01 R., Gaddi; G., Meneghesso; Pavesi, Maura; M., Peroni; C., Canali; E., Zanoni
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors
1999-01-01 D., Dieci; C., Canali; Menozzi, Roberto; Pavesi, Maura; A., Cetronio
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements
1999-01-01 Pavesi, Maura; L., Selmi; Manfredi, Manfredo; E., Sangiorgi; M., Mastrapasqua; J., Bude
Cathode hot electrons and anode hot holes in tunneling MOS capacitors
2000-01-01 P., Palestri; L., Selmi; E., Sangiorgi; Pavesi, Maura; F., Widdershoven
Diagnosis of trapping phenomena in GaN MESFETs
2000-01-01 G., Meneghesso; A., Chini; E., Zanoni; M., Manfredi; Pavesi, Maura; B., Boudart; C., Gaquiere
Impact ionization and photon emission in MOS capacitors and FETs
2000-01-01 P., Palestri; Pavesi, Maura; P. L., Rigolli; L., Selmi; A., Dalla Serra; A., Abramo; F., Widdershoven; E., Sangiorgi
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors
2000-01-01 P., Palestri; L., Selmi; Pavesi, Maura; F., Widdershoven; E., Sangiorgi
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence
2000-01-01 G., Meneghesso; T., Grave; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence
2001-01-01 N., Armani; M., Manfredi; G., Meneghesso; Pavesi, Maura; G. C., Salviati; E., Zanoni
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy
2001-01-01 N., Armani; A., Chini; Manfredi, Manfredo; G., Meneghesso; Pavesi, Maura; V., Grillo; G., Salviati; E., Zanoni
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films
2001-01-01 Baraldi, Andrea; Capelletti, Rosanna; Pavesi, Maura; M., Zonin; M., Casalboni; F., Sarcinelli
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs
2002-01-01 P., Palestri; L., Selmi; A., Della Serra; A., Abramo; E., Sangiorgi; Pavesi, Maura; P. L., Rigolli; F., Widdershoven
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435))
2002-01-01 Palestri, P.; Serra, A. D.; Selmi, L.; Pavesi, M.; Rigolli, P. L.; Abramo, A.; Widdershoven, F.; Sangiorgi, E.
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435))
2002-01-01 Palestri, P.; Serra, A. D.; Selmi, L.; Pavesi, M.; Rigolli, P. L.; Abramo, A.; Widdershoven, F.; Sangiorgi, E.
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices
2002-01-01 Pavesi, Maura; P. L., Rigolli; Manfredi, Manfredo; P., Palestri; L., Selmi
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors
2002-01-01 P., Palestri; A. D., Serra; L., Selmi; Pavesi, Maura; P. L., Rigolli; A., Abramo; F., Widdershoven; E., Sangiorgi
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy
2002-01-01 N., Armani; Manfredi, Manfredo; Pavesi, Maura; V., Grillo; G., Salviati; A., Chini; G., Meneghesso; E., Zanoni
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films
2003-01-01 Baraldi, A.; Capelletti, R.; Mora, C.; Pavesi, M.; Casalboni, Mauro; Pizzoferrato, R.; Sarcinelli, F.; Prosposito, P.
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors
2004-01-01 Pavesi, Maura; Manfredi, Manfredo; P. L., Rigolli; N., Armani; G., Salviati
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels
2004-01-01 G., Meneghesso; S., Levada; E., Zanoni; G., Salviati; N., Armani; F., Rossi; Pavesi, Maura; M., Manfredi; A., Cavallini; A., Castaldini; S., Du; I., Eliashevich
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Electroluminescence analysis of HFET’s breakdown | 1-gen-1999 | R., Gaddi; G., Meneghesso; Pavesi, Maura; M., Peroni; C., Canali; E., Zanoni | |
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors | 1-gen-1999 | D., Dieci; C., Canali; Menozzi, Roberto; Pavesi, Maura; A., Cetronio | |
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements | 1-gen-1999 | Pavesi, Maura; L., Selmi; Manfredi, Manfredo; E., Sangiorgi; M., Mastrapasqua; J., Bude | |
Cathode hot electrons and anode hot holes in tunneling MOS capacitors | 1-gen-2000 | P., Palestri; L., Selmi; E., Sangiorgi; Pavesi, Maura; F., Widdershoven | |
Diagnosis of trapping phenomena in GaN MESFETs | 1-gen-2000 | G., Meneghesso; A., Chini; E., Zanoni; M., Manfredi; Pavesi, Maura; B., Boudart; C., Gaquiere | |
Impact ionization and photon emission in MOS capacitors and FETs | 1-gen-2000 | P., Palestri; Pavesi, Maura; P. L., Rigolli; L., Selmi; A., Dalla Serra; A., Abramo; F., Widdershoven; E., Sangiorgi | |
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors | 1-gen-2000 | P., Palestri; L., Selmi; Pavesi, Maura; F., Widdershoven; E., Sangiorgi | |
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence | 1-gen-2000 | G., Meneghesso; T., Grave; Manfredi, Manfredo; Pavesi, Maura; C., Canali; E., Zanoni | |
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence | 1-gen-2001 | N., Armani; M., Manfredi; G., Meneghesso; Pavesi, Maura; G. C., Salviati; E., Zanoni | |
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy | 1-gen-2001 | N., Armani; A., Chini; Manfredi, Manfredo; G., Meneghesso; Pavesi, Maura; V., Grillo; G., Salviati; E., Zanoni | |
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films | 1-gen-2001 | Baraldi, Andrea; Capelletti, Rosanna; Pavesi, Maura; M., Zonin; M., Casalboni; F., Sarcinelli | |
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs | 1-gen-2002 | P., Palestri; L., Selmi; A., Della Serra; A., Abramo; E., Sangiorgi; Pavesi, Maura; P. L., Rigolli; F., Widdershoven | |
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) | 1-gen-2002 | Palestri, P.; Serra, A. D.; Selmi, L.; Pavesi, M.; Rigolli, P. L.; Abramo, A.; Widdershoven, F.; Sangiorgi, E. | |
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) | 1-gen-2002 | Palestri, P.; Serra, A. D.; Selmi, L.; Pavesi, M.; Rigolli, P. L.; Abramo, A.; Widdershoven, F.; Sangiorgi, E. | |
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices | 1-gen-2002 | Pavesi, Maura; P. L., Rigolli; Manfredi, Manfredo; P., Palestri; L., Selmi | |
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors | 1-gen-2002 | P., Palestri; A. D., Serra; L., Selmi; Pavesi, Maura; P. L., Rigolli; A., Abramo; F., Widdershoven; E., Sangiorgi | |
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy | 1-gen-2002 | N., Armani; Manfredi, Manfredo; Pavesi, Maura; V., Grillo; G., Salviati; A., Chini; G., Meneghesso; E., Zanoni | |
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films | 1-gen-2003 | Baraldi, A.; Capelletti, R.; Mora, C.; Pavesi, M.; Casalboni, Mauro; Pizzoferrato, R.; Sarcinelli, F.; Prosposito, P. | |
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors | 1-gen-2004 | Pavesi, Maura; Manfredi, Manfredo; P. L., Rigolli; N., Armani; G., Salviati | |
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels | 1-gen-2004 | G., Meneghesso; S., Levada; E., Zanoni; G., Salviati; N., Armani; F., Rossi; Pavesi, Maura; M., Manfredi; A., Cavallini; A., Castaldini; S., Du; I., Eliashevich |
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