This paper addresses the problem of the origin of majority and minority carriers' substrate currents in MOS devices. In particular, we present a critical analysis of published and original tunneling experiments by means of a novel, physically based model of impact ionization and hot carrier photon emission and re-absorption in the substrate. The model explains some relevant features of substrate minority carrier currents in saturated nMOSFETs, and provides a better understanding of the origin of substrate currents in tunneling MOS capacitors.
Impact ionization and photon emission in MOS capacitors and FETs / P., Palestri; Pavesi, Maura; P. L., Rigolli; L., Selmi; A., Dalla Serra; A., Abramo; F., Widdershoven; E., Sangiorgi. - ELETTRONICO. - 00CH37138:(2000), pp. 97-100. (Intervento presentato al convegno International Electron Devices Meeting - IEDM'00 tenutosi a San Francisco, CA, USA nel 10-13 December 2000) [10.1109/IEDM.2000.904267].
Impact ionization and photon emission in MOS capacitors and FETs
PAVESI, Maura;
2000-01-01
Abstract
This paper addresses the problem of the origin of majority and minority carriers' substrate currents in MOS devices. In particular, we present a critical analysis of published and original tunneling experiments by means of a novel, physically based model of impact ionization and hot carrier photon emission and re-absorption in the substrate. The model explains some relevant features of substrate minority carrier currents in saturated nMOSFETs, and provides a better understanding of the origin of substrate currents in tunneling MOS capacitors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
