We present a Monte Carlo (MC) model comprising SiOz and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends fullband density of states @OS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for Non Volatile Memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors / P., Palestri; L., Selmi; Pavesi, Maura; F., Widdershoven; E., Sangiorgi. - ELETTRONICO. - (2000), pp. 38-41. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices 2000 tenutosi a Washington, USA nel 6-8 Sept. 2000).
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors
PAVESI, Maura;
2000-01-01
Abstract
We present a Monte Carlo (MC) model comprising SiOz and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends fullband density of states @OS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for Non Volatile Memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
