MANFREDI, Manfredo
 Distribuzione geografica
Continente #
NA - Nord America 887
EU - Europa 650
AS - Asia 284
Totale 1.821
Nazione #
US - Stati Uniti d'America 874
CN - Cina 268
IE - Irlanda 152
UA - Ucraina 141
SE - Svezia 130
FI - Finlandia 98
DE - Germania 64
BE - Belgio 28
GB - Regno Unito 17
CA - Canada 13
TR - Turchia 13
AT - Austria 10
IT - Italia 7
IN - India 3
CZ - Repubblica Ceca 1
FR - Francia 1
NL - Olanda 1
Totale 1.821
Città #
Chandler 177
Dublin 152
Jacksonville 149
Ann Arbor 69
Beijing 69
Dearborn 67
Ashburn 50
Nanjing 44
Princeton 32
Brussels 28
San Mateo 25
Wilmington 25
Kunming 22
Shanghai 21
Shenyang 17
Helsinki 15
Woodbridge 15
New York 14
Izmir 13
Toronto 13
Hebei 12
Hefei 10
Boardman 9
Jiaxing 9
Nanchang 9
Jinan 8
Vienna 6
Des Moines 5
Falls Church 5
Auburn Hills 4
Changsha 4
Guangzhou 4
Norwalk 4
Seattle 4
Tianjin 4
Fremont 3
Hangzhou 3
Los Angeles 3
Zhengzhou 3
Grafing 2
Houston 2
Modena 2
Ningbo 2
Padova 2
Parma 2
Taizhou 2
Brno 1
Chengdu 1
Chongqing 1
Haikou 1
Harbin 1
Lanzhou 1
Lishui 1
Mont-saint-aignan 1
Orland Park 1
Quzhou 1
Rockville 1
Shenzhen 1
Verona 1
Washington 1
Wenzhou 1
Wuhan 1
Totale 1.156
Nome #
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 88
Electron and hole-related luminescence processes in Gate Injection Transistors 82
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 81
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 75
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission neasurements 71
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 65
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 64
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 63
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 61
RELIABILITY ANALYSIS OF GAN BASED LEDS FOR SOLID STATE ILLUMINATION 61
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 60
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence 58
OPTICAL EVIDENCE OF AN ELECTROTHERMAL DEGRADATION OF INGAN BASED LIGHT EMITTING DIODES DURING ELECTRICAL STRESS 56
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 56
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 56
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 56
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 56
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 55
On the role of Boron in CdTe and CdZnTe crystals 55
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 54
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 54
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 54
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 53
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 52
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 50
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 49
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 49
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 48
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 45
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 45
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 44
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 36
Totale 1.852
Categoria #
all - tutte 5.511
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.511


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201940 0 0 0 0 0 0 0 0 9 5 23 3
2019/2020481 68 93 32 6 50 45 60 7 50 20 19 31
2020/2021219 3 34 27 2 31 0 32 12 40 3 34 1
2021/2022152 3 1 1 11 7 7 21 23 9 15 16 38
2022/2023607 61 45 45 58 43 82 6 36 207 5 14 5
2023/2024164 22 26 6 5 21 43 25 14 2 0 0 0
Totale 1.852