IRIS
MANFREDI, Manfredo
 Distribuzione geografica
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Continente #
NA - Nord America 909
EU - Europa 595
AS - Asia 348
Totale 1.852
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Nazione #
US - Stati Uniti d'America 896
CN - Cina 299
UA - Ucraina 141
SE - Svezia 130
IE - Irlanda 120
FI - Finlandia 98
DE - Germania 64
SG - Singapore 33
GB - Regno Unito 17
BE - Belgio 15
CA - Canada 13
TR - Turchia 13
IT - Italia 7
IN - India 3
AT - Austria 1
FR - Francia 1
NL - Olanda 1
Totale 1.852
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Città #
Chandler 177
Jacksonville 149
Dublin 120
Ann Arbor 69
Beijing 69
Dearborn 67
Ashburn 50
Nanjing 44
Princeton 32
Shanghai 30
San Mateo 25
Wilmington 25
Kunming 22
Los Angeles 21
Singapore 19
Shenyang 17
Brussels 15
Helsinki 15
Woodbridge 15
New York 14
Izmir 13
Toronto 13
Hebei 12
Hefei 10
Boardman 9
Jiaxing 9
Nanchang 9
Jinan 8
Des Moines 5
Falls Church 5
Auburn Hills 4
Changsha 4
Guangzhou 4
Norwalk 4
Seattle 4
Tianjin 4
Fremont 3
Hangzhou 3
Zhengzhou 3
Grafing 2
Houston 2
Modena 2
Ningbo 2
Padova 2
Parma 2
Phoenix 2
Taizhou 2
Washington 2
Chengdu 1
Chongqing 1
Haikou 1
Harbin 1
Lanzhou 1
Lishui 1
Mont-saint-aignan 1
Orland Park 1
Quzhou 1
Rockville 1
Shenzhen 1
Verona 1
Vienna 1
Wenzhou 1
Wuhan 1
Totale 1.154
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Nome #
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 84
Electron and hole-related luminescence processes in Gate Injection Transistors 83
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 81
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 78
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission neasurements 68
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 66
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 66
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 64
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 63
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence 59
RELIABILITY ANALYSIS OF GAN BASED LEDS FOR SOLID STATE ILLUMINATION 59
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 58
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 58
On the role of Boron in CdTe and CdZnTe crystals 58
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 57
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 57
OPTICAL EVIDENCE OF AN ELECTROTHERMAL DEGRADATION OF INGAN BASED LIGHT EMITTING DIODES DURING ELECTRICAL STRESS 56
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 56
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 56
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 56
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 55
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 55
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 55
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 54
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 53
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 50
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 50
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 50
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 49
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 47
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 45
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 37
Totale 1.883
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Categoria #
all - tutte 6.527
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.527
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020481 68 93 32 6 50 45 60 7 50 20 19 31
2020/2021219 3 34 27 2 31 0 32 12 40 3 34 1
2021/2022152 3 1 1 11 7 7 21 23 9 15 16 38
2022/2023563 61 45 45 58 43 82 4 34 174 3 11 3
2023/2024217 19 25 4 1 20 43 25 14 4 24 22 16
2024/202522 22 0 0 0 0 0 0 0 0 0 0 0
Totale 1.883