IRIS
MANFREDI, Manfredo
 Distribuzione geografica
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Continente #
NA - Nord America 906
EU - Europa 595
AS - Asia 291
Totale 1.792
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Nazione #
US - Stati Uniti d'America 893
CN - Cina 272
UA - Ucraina 141
SE - Svezia 130
IE - Irlanda 120
FI - Finlandia 98
DE - Germania 64
GB - Regno Unito 17
BE - Belgio 15
CA - Canada 13
TR - Turchia 13
IT - Italia 7
IN - India 3
SG - Singapore 3
AT - Austria 1
FR - Francia 1
NL - Olanda 1
Totale 1.792
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Città #
Chandler 177
Jacksonville 149
Dublin 120
Ann Arbor 69
Beijing 69
Dearborn 67
Ashburn 50
Nanjing 44
Princeton 32
San Mateo 25
Shanghai 25
Wilmington 25
Kunming 22
Los Angeles 21
Shenyang 17
Brussels 15
Helsinki 15
Woodbridge 15
New York 14
Izmir 13
Toronto 13
Hebei 12
Hefei 10
Boardman 9
Jiaxing 9
Nanchang 9
Jinan 8
Des Moines 5
Falls Church 5
Auburn Hills 4
Changsha 4
Guangzhou 4
Norwalk 4
Seattle 4
Tianjin 4
Fremont 3
Hangzhou 3
Zhengzhou 3
Grafing 2
Houston 2
Modena 2
Ningbo 2
Padova 2
Parma 2
Singapore 2
Taizhou 2
Washington 2
Chengdu 1
Chongqing 1
Haikou 1
Harbin 1
Lanzhou 1
Lishui 1
Mont-saint-aignan 1
Orland Park 1
Quzhou 1
Rockville 1
Shenzhen 1
Verona 1
Vienna 1
Wenzhou 1
Wuhan 1
Totale 1.130
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Nome #
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 82
Electron and hole-related luminescence processes in Gate Injection Transistors 81
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 80
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 75
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission neasurements 66
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 65
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 64
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 62
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 60
RELIABILITY ANALYSIS OF GAN BASED LEDS FOR SOLID STATE ILLUMINATION 59
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence 57
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 56
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 56
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 56
On the role of Boron in CdTe and CdZnTe crystals 56
OPTICAL EVIDENCE OF AN ELECTROTHERMAL DEGRADATION OF INGAN BASED LIGHT EMITTING DIODES DURING ELECTRICAL STRESS 55
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 55
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 55
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 55
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 54
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 53
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 53
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 52
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 52
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 51
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 49
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 48
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 47
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 46
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 45
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 43
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 35
Totale 1.823
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Categoria #
all - tutte 5.931
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.931
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201926 0 0 0 0 0 0 0 0 0 0 23 3
2019/2020481 68 93 32 6 50 45 60 7 50 20 19 31
2020/2021219 3 34 27 2 31 0 32 12 40 3 34 1
2021/2022152 3 1 1 11 7 7 21 23 9 15 16 38
2022/2023563 61 45 45 58 43 82 4 34 174 3 11 3
2023/2024179 19 25 4 1 20 43 25 14 4 24 0 0
Totale 1.823