IRIS
MANFREDI, Manfredo
 Distribuzione geografica
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Continente #
NA - Nord America 948
EU - Europa 595
AS - Asia 352
Totale 1.895
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Nazione #
US - Stati Uniti d'America 934
CN - Cina 300
UA - Ucraina 141
SE - Svezia 130
IE - Irlanda 120
FI - Finlandia 98
DE - Germania 64
SG - Singapore 36
GB - Regno Unito 17
BE - Belgio 15
CA - Canada 14
TR - Turchia 13
IT - Italia 7
IN - India 3
AT - Austria 1
FR - Francia 1
NL - Olanda 1
Totale 1.895
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Città #
Chandler 177
Jacksonville 149
Dublin 120
Ann Arbor 69
Beijing 69
Dearborn 67
Ashburn 50
Nanjing 44
Boardman 41
Princeton 32
Shanghai 30
San Mateo 25
Wilmington 25
Kunming 22
Los Angeles 21
Singapore 21
Shenyang 17
Brussels 15
Helsinki 15
Woodbridge 15
New York 14
Toronto 14
Izmir 13
Hebei 12
Hefei 10
Jiaxing 9
Nanchang 9
Jinan 8
Des Moines 5
Falls Church 5
Guangzhou 5
Auburn Hills 4
Changsha 4
Norwalk 4
Seattle 4
Tianjin 4
Fremont 3
Hangzhou 3
Phoenix 3
Zhengzhou 3
Dallas 2
Grafing 2
Houston 2
Modena 2
Ningbo 2
Padova 2
Parma 2
Santa Clara 2
Taizhou 2
Washington 2
Chengdu 1
Chongqing 1
Haikou 1
Harbin 1
Lanzhou 1
Lishui 1
Mont-saint-aignan 1
Orland Park 1
Quzhou 1
Rockville 1
Shenzhen 1
Verona 1
Vienna 1
Wenzhou 1
Wuhan 1
Totale 1.195
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Nome #
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 86
Electron and hole-related luminescence processes in Gate Injection Transistors 85
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 83
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 79
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission neasurements 69
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 67
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 67
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 65
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 64
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 60
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence 60
RELIABILITY ANALYSIS OF GAN BASED LEDS FOR SOLID STATE ILLUMINATION 60
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 59
On the role of Boron in CdTe and CdZnTe crystals 59
OPTICAL EVIDENCE OF AN ELECTROTHERMAL DEGRADATION OF INGAN BASED LIGHT EMITTING DIODES DURING ELECTRICAL STRESS 58
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 58
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 58
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 58
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 57
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 57
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 57
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 57
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 56
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 56
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 54
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 53
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 51
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 51
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 50
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 48
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 46
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 38
Totale 1.926
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Categoria #
all - tutte 6.989
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.989
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020320 0 0 32 6 50 45 60 7 50 20 19 31
2020/2021219 3 34 27 2 31 0 32 12 40 3 34 1
2021/2022152 3 1 1 11 7 7 21 23 9 15 16 38
2022/2023563 61 45 45 58 43 82 4 34 174 3 11 3
2023/2024217 19 25 4 1 20 43 25 14 4 24 22 16
2024/202565 23 42 0 0 0 0 0 0 0 0 0 0
Totale 1.926