IRIS
MANFREDI, Manfredo
 Distribuzione geografica
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Continente #
NA - Nord America 1.697
AS - Asia 1.329
EU - Europa 807
SA - Sud America 200
AF - Africa 57
Continente sconosciuto - Info sul continente non disponibili 31
Totale 4.121
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Nazione #
US - Stati Uniti d'America 1.647
SG - Singapore 505
CN - Cina 433
VN - Vietnam 176
BR - Brasile 156
UA - Ucraina 143
SE - Svezia 136
FI - Finlandia 129
IE - Irlanda 121
HK - Hong Kong 101
DE - Germania 90
FR - Francia 48
ZA - Sudafrica 38
NL - Olanda 34
GB - Regno Unito 33
CA - Canada 24
TR - Turchia 23
RU - Federazione Russa 22
MX - Messico 17
AR - Argentina 16
BE - Belgio 16
EC - Ecuador 15
IQ - Iraq 15
BD - Bangladesh 13
IN - India 13
IT - Italia 12
JP - Giappone 8
ES - Italia 7
PH - Filippine 7
PY - Paraguay 7
TH - Thailandia 6
PK - Pakistan 5
UZ - Uzbekistan 5
MA - Marocco 4
PL - Polonia 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
DZ - Algeria 3
EG - Egitto 3
ID - Indonesia 3
KE - Kenya 3
TN - Tunisia 3
AZ - Azerbaigian 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
HN - Honduras 2
JO - Giordania 2
NP - Nepal 2
PE - Perù 2
RS - Serbia 2
VE - Venezuela 2
AT - Austria 1
BF - Burkina Faso 1
BG - Bulgaria 1
CI - Costa d'Avorio 1
CO - Colombia 1
CR - Costa Rica 1
GT - Guatemala 1
HR - Croazia 1
JM - Giamaica 1
KZ - Kazakistan 1
LT - Lituania 1
LV - Lettonia 1
MY - Malesia 1
NI - Nicaragua 1
PA - Panama 1
PS - Palestinian Territory 1
QA - Qatar 1
SA - Arabia Saudita 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TW - Taiwan 1
UY - Uruguay 1
Totale 4.090
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Città #
Singapore 237
Ashburn 190
Chandler 177
Jacksonville 149
Santa Clara 149
San Jose 133
Dublin 121
Beijing 116
Hong Kong 98
Ann Arbor 69
Dearborn 68
Dallas 57
Ho Chi Minh City 57
Nanjing 44
Boardman 41
Helsinki 41
Council Bluffs 40
Los Angeles 37
Johannesburg 36
Hanoi 35
Princeton 32
Shanghai 32
New York 29
Lauterbourg 26
San Mateo 25
Wilmington 25
Kunming 22
Columbus 17
Shenyang 17
Toronto 17
Brussels 15
Woodbridge 15
Marseille 14
Moscow 14
Munich 14
Izmir 13
Hebei 12
The Dalles 12
Haiphong 11
Hefei 10
Rio de Janeiro 10
São Paulo 10
Jiaxing 9
Nanchang 9
Da Nang 8
Jinan 8
Baghdad 7
Buffalo 7
Falkenstein 7
Tokyo 7
Asunción 6
Atlanta 6
Guangzhou 6
Stockholm 6
Brasília 5
Can Tho 5
Des Moines 5
Falls Church 5
Guayaquil 5
Hangzhou 5
London 5
Mexico City 5
Orem 5
Seattle 5
Tashkent 5
Turku 5
Ankara 4
Auburn Hills 4
Campinas 4
Changsha 4
Dhaka 4
Lyon 4
Norwalk 4
Phoenix 4
Tianjin 4
Warsaw 4
Belo Horizonte 3
Biên Hòa 3
Cairo 3
Caldas Novas 3
Chicago 3
Fremont 3
Houston 3
Porto Alegre 3
Quito 3
San Francisco 3
San Miguel de Tucumán 3
Tân Tiến 3
Washington 3
Zhengzhou 3
Abu Dhabi 2
Algiers 2
Amman 2
Angra dos Reis 2
Anápolis 2
Augusta 2
Baku 2
Chengdu 2
Chennai 2
Denver 2
Totale 2.535
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Nome #
Electron and hole-related luminescence processes in Gate Injection Transistors 186
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 168
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 168
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 153
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 149
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 146
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 146
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 142
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 141
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 139
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 136
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 135
On the role of Boron in CdTe and CdZnTe crystals 135
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 134
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 134
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission neasurements 133
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence 128
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 127
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 126
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 126
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 119
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 118
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 110
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 110
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 109
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 109
RELIABILITY ANALYSIS OF GAN BASED LEDS FOR SOLID STATE ILLUMINATION 108
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 105
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 101
OPTICAL EVIDENCE OF AN ELECTROTHERMAL DEGRADATION OF INGAN BASED LIGHT EMITTING DIODES DURING ELECTRICAL STRESS 100
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 96
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 84
Totale 4.121
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Categoria #
all - tutte 14.477
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.477
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022149 0 1 1 11 7 7 21 23 9 15 16 38
2022/2023563 61 45 45 58 43 82 4 34 174 3 11 3
2023/2024217 19 25 4 1 20 43 25 14 4 24 22 16
2024/2025839 23 42 35 62 121 172 20 28 104 57 64 111
2025/20261.364 159 124 151 114 251 89 160 32 144 97 30 13
2026/202757 30 27 0 0 0 0 0 0 0 0 0 0
Totale 4.121