MANFREDI, Manfredo
 Distribuzione geografica
Continente #
EU - Europa 29
Totale 29
Nazione #
IT - Italia 29
Totale 29
Città #
Parma 15
Totale 15
Nome #
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes, file e177fbc4-0fbd-50b0-e053-d805fe0adaee 2
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements, file e177fbc5-b719-50b0-e053-d805fe0adaee 2
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes, file e177fbc5-af5a-50b0-e053-d805fe0adaee 1
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes, file e177fbc5-b022-50b0-e053-d805fe0adaee 1
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs, file e177fbc5-b027-50b0-e053-d805fe0adaee 1
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes, file e177fbc5-b02c-50b0-e053-d805fe0adaee 1
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence, file e177fbc5-b08f-50b0-e053-d805fe0adaee 1
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors, file e177fbc5-b09d-50b0-e053-d805fe0adaee 1
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications, file e177fbc5-b0ca-50b0-e053-d805fe0adaee 1
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing, file e177fbc5-b0d2-50b0-e053-d805fe0adaee 1
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors, file e177fbc5-b0da-50b0-e053-d805fe0adaee 1
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy, file e177fbc5-b10b-50b0-e053-d805fe0adaee 1
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices, file e177fbc5-b10d-50b0-e053-d805fe0adaee 1
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence, file e177fbc5-b10f-50b0-e053-d805fe0adaee 1
On the role of Boron in CdTe and CdZnTe crystals, file e177fbc5-b2de-50b0-e053-d805fe0adaee 1
Electron and hole-related luminescence processes in Gate Injection Transistors, file e177fbc5-b5de-50b0-e053-d805fe0adaee 1
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs, file e177fbc5-b5df-50b0-e053-d805fe0adaee 1
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs, file e177fbc5-b61d-50b0-e053-d805fe0adaee 1
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's, file e177fbc5-b621-50b0-e053-d805fe0adaee 1
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques, file e177fbc5-b905-50b0-e053-d805fe0adaee 1
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events, file e177fbc5-be09-50b0-e053-d805fe0adaee 1
Anomalous impact ionization gate current in high breakdown InP-based HEMTs, file e177fbc5-c159-50b0-e053-d805fe0adaee 1
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique, file e177fbc5-c21c-50b0-e053-d805fe0adaee 1
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy, file e177fbc5-c30d-50b0-e053-d805fe0adaee 1
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs, file e177fbc5-c75a-50b0-e053-d805fe0adaee 1
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime, file e177fbc5-c75c-50b0-e053-d805fe0adaee 1
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's, file e177fbc5-ca7d-50b0-e053-d805fe0adaee 1
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Categoria #
all - tutte 29
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
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