Sfoglia per Autore
A study of the electrical properties controlled by residual acceptors in gallium antimonide
1993-01-01 F., Meinardi; Parisini, Antonella; Tarricone, Luciano
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As
1993-01-01 Baraldi, Andrea; Colonna, F.; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Gombia, E.; Mosca, R.
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs
1993-01-01 Ghezzi, Carlo; Parisini, Antonella
Spatial correlations of DX charges and electron mobility in AlGaAs
1993-01-01 P. L., Coz; Ghezzi, Carlo; Parisini, Antonella
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As
1994-01-01 Baraldi, Andrea; Colonna, F.; Ghezzi, Carlo; Parisini, Antonella
Coexistence of th DX center and other Si-related electron bound states in AlGaAs
1994-01-01 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Electron scattering by spatially correlated DX charges
1994-01-01 Ghezzi, Carlo; Parisini, Antonella; V., Dallacasa
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization
1994-01-01 Baraldi, Andrea; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.; Avanzini, V.; Allegri, P.
Influence of the DX center on the transport properties of Si-doped AlxGa1-xAs
1995-01-01 Parisini, Antonella
Hall and photo-Hall effect measurements on sulphur-doped GaSb
1995-01-01 Hubik, P.; Mares, J. J.; Kristofik, J.; Baraldi, Andrea; Ghezzi, Carlo; Parisini, Antonella
Preparation by MBE and study of GaSb-based structures
1995-01-01 Baraldi, Andrea; Bosacchi, A.; Franchi, S.; Ghezzi, Carlo; Gombia, E.; Magnanini, Renato; Mosca, R.; Parisini, Antonella; Tarricone, Luciano; Allegri, P.; Avanzini, V.
Optical absorption near the fundamental absorption edge in GaSb
1995-01-01 Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; B., Rotelli; Tarricone, Luciano; A., Bosacchi; S., Franchi
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE
1995-01-01 Bosacchi, A.; Franchi, S.; Allegri, P.; Avanzini, V.; Baraldi, Andrea; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano
Analysis of persistent photoconductivity in sulphur doped GaSb
1995-01-01 Baraldi, Andrea; Ghezzi, C.; Parisini, Antonella; Hubik, P.; Mares, J. J.; Kristofik, J.
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility
1996-01-01 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy
1996-01-01 Baraldi, Andrea; Colonna, F.; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
Concentration dependence of optical absorption in Tellurium doped GaSb
1997-01-01 Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity
1997-01-01 Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity
1997-01-01 Baraldi, A; Colonna, F; Covucci, G; Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Bosacchi, A; Franchi, S
A shallow state coexisting with the DX center in Te-doped AlGaSb
1998-01-01 Baraldi, Andrea; Franchi, S.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A study of the electrical properties controlled by residual acceptors in gallium antimonide | 1-gen-1993 | F., Meinardi; Parisini, Antonella; Tarricone, Luciano | |
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As | 1-gen-1993 | Baraldi, Andrea; Colonna, F.; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Gombia, E.; Mosca, R. | |
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs | 1-gen-1993 | Ghezzi, Carlo; Parisini, Antonella | |
Spatial correlations of DX charges and electron mobility in AlGaAs | 1-gen-1993 | P. L., Coz; Ghezzi, Carlo; Parisini, Antonella | |
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As | 1-gen-1994 | Baraldi, Andrea; Colonna, F.; Ghezzi, Carlo; Parisini, Antonella | |
Coexistence of th DX center and other Si-related electron bound states in AlGaAs | 1-gen-1994 | Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R. | |
Electron scattering by spatially correlated DX charges | 1-gen-1994 | Ghezzi, Carlo; Parisini, Antonella; V., Dallacasa | |
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization | 1-gen-1994 | Baraldi, Andrea; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.; Avanzini, V.; Allegri, P. | |
Influence of the DX center on the transport properties of Si-doped AlxGa1-xAs | 1-gen-1995 | Parisini, Antonella | |
Hall and photo-Hall effect measurements on sulphur-doped GaSb | 1-gen-1995 | Hubik, P.; Mares, J. J.; Kristofik, J.; Baraldi, Andrea; Ghezzi, Carlo; Parisini, Antonella | |
Preparation by MBE and study of GaSb-based structures | 1-gen-1995 | Baraldi, Andrea; Bosacchi, A.; Franchi, S.; Ghezzi, Carlo; Gombia, E.; Magnanini, Renato; Mosca, R.; Parisini, Antonella; Tarricone, Luciano; Allegri, P.; Avanzini, V. | |
Optical absorption near the fundamental absorption edge in GaSb | 1-gen-1995 | Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; B., Rotelli; Tarricone, Luciano; A., Bosacchi; S., Franchi | |
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE | 1-gen-1995 | Bosacchi, A.; Franchi, S.; Allegri, P.; Avanzini, V.; Baraldi, Andrea; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano | |
Analysis of persistent photoconductivity in sulphur doped GaSb | 1-gen-1995 | Baraldi, Andrea; Ghezzi, C.; Parisini, Antonella; Hubik, P.; Mares, J. J.; Kristofik, J. | |
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility | 1-gen-1996 | Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R. | |
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy | 1-gen-1996 | Baraldi, Andrea; Colonna, F.; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S. | |
Concentration dependence of optical absorption in Tellurium doped GaSb | 1-gen-1997 | Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S. | |
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity | 1-gen-1997 | Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S. | |
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity | 1-gen-1997 | Baraldi, A; Colonna, F; Covucci, G; Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Bosacchi, A; Franchi, S | |
A shallow state coexisting with the DX center in Te-doped AlGaSb | 1-gen-1998 | Baraldi, Andrea; Franchi, S.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano |
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