BOSI, Matteo
 Distribuzione geografica
Continente #
EU - Europa 296
NA - Nord America 257
AS - Asia 165
SA - Sud America 3
AF - Africa 2
Totale 723
Nazione #
US - Stati Uniti d'America 255
IT - Italia 105
CN - Cina 76
IE - Irlanda 71
SG - Singapore 66
SE - Svezia 38
DE - Germania 20
FR - Francia 15
FI - Finlandia 14
PL - Polonia 10
TR - Turchia 9
BE - Belgio 8
JP - Giappone 6
ES - Italia 4
GB - Regno Unito 4
IN - India 4
BR - Brasile 3
CZ - Repubblica Ceca 3
AT - Austria 2
CA - Canada 2
CH - Svizzera 2
CI - Costa d'Avorio 2
BD - Bangladesh 1
HK - Hong Kong 1
KR - Corea 1
TW - Taiwan 1
Totale 723
Città #
Dublin 69
Chandler 56
Singapore 51
Parma 40
Ann Arbor 34
Boardman 26
Ashburn 23
Beijing 17
Nanjing 15
Dearborn 14
Shanghai 12
Warsaw 10
Milan 9
Munich 9
Princeton 8
Wilmington 7
Brussels 6
Izmir 6
Strasbourg 6
Bremen 5
Falls Church 5
Jinan 5
Tokyo 5
Cremona 4
Helsinki 4
Valladolid 4
Istanbul 3
Kunming 3
Marseille 3
San Mateo 3
Seattle 3
Abidjan 2
Acqui Terme 2
Battipaglia 2
Des Moines 2
Ghent 2
Glasgow 2
Grenoble 2
Guangzhou 2
Indore 2
Legnano 2
Leipzig 2
Norwalk 2
Pavia 2
Pune 2
Redwood City 2
Reggio Emilia 2
Rockville 2
Rome 2
Sant'ilario D'enza 2
Santa Maria A Vico 2
Vanzago 2
Vienna 2
Bismarque 1
Bologna 1
Brno 1
Brooklyn 1
Bubeneč 1
Carpi 1
Changsha 1
Chungnam 1
Crotone 1
Edinburgh 1
Frankfurt am Main 1
Fuzhou 1
Grafing 1
Haikou 1
Hebei 1
Hefei 1
Kagoya 1
Lausanne 1
Lishui 1
Los Angeles 1
Menlo Park 1
Miami 1
Modena 1
Nanchang 1
Ottawa 1
Paris 1
Piacenza 1
Rio de Janeiro 1
Santa Clara 1
Shenyang 1
São Luís 1
Taipei 1
Trento 1
Xian 1
Zurich 1
Totale 544
Nome #
Si and Sn doping of ε-Ga2O3 layers 102
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 94
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 76
The real structure of ε-Ga2O3 and its relation to κ-phase 66
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 64
Gallium Oxide: A Rising Star in The Semiconductor Realm 63
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 62
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 57
HeteroSiC & WASMPE 2013 57
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 37
Characterization of GaN/InGaN hetero-structures by SEM and CL 30
Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL 22
Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 19
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 8
Totale 757
Categoria #
all - tutte 3.093
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.093


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202059 0 0 0 0 6 17 8 5 3 11 4 5
2020/202128 0 5 0 1 3 1 2 2 12 1 1 0
2021/202264 5 2 0 6 17 4 6 1 3 4 0 16
2022/2023219 20 23 19 19 11 26 5 11 77 0 2 6
2023/2024132 15 7 0 17 8 21 10 13 6 5 6 24
2024/2025159 13 22 20 53 51 0 0 0 0 0 0 0
Totale 757