BOSI, Matteo
 Distribuzione geografica
Continente #
EU - Europa 263
NA - Nord America 234
AS - Asia 95
Totale 592
Nazione #
US - Stati Uniti d'America 233
IT - Italia 99
IE - Irlanda 68
CN - Cina 65
SE - Svezia 38
FI - Finlandia 14
SG - Singapore 14
FR - Francia 12
DE - Germania 11
BE - Belgio 9
TR - Turchia 6
JP - Giappone 5
ES - Italia 4
CZ - Repubblica Ceca 3
GB - Regno Unito 3
CH - Svizzera 2
IN - India 2
CA - Canada 1
HK - Hong Kong 1
KR - Corea 1
TW - Taiwan 1
Totale 592
Città #
Dublin 66
Chandler 56
Ann Arbor 34
Parma 34
Ashburn 24
Beijing 17
Nanjing 15
Boardman 14
Dearborn 14
Milan 11
Shanghai 11
Singapore 11
Princeton 8
Wilmington 7
Izmir 6
Strasbourg 6
Bremen 5
Brussels 5
Falls Church 5
Jinan 5
Cremona 4
Helsinki 4
Tokyo 4
Valladolid 4
Kunming 3
Modena 3
Piacenza 3
San Mateo 3
Seattle 3
Acqui Terme 2
Battipaglia 2
Bologna 2
Des Moines 2
Ghent 2
Glasgow 2
Grenoble 2
Guangzhou 2
Legnano 2
Norwalk 2
Pavia 2
Pune 2
Redwood City 2
Rockville 2
Rome 2
Sant'ilario D'enza 2
Santa Maria A Vico 2
Vanzago 2
Brno 1
Brooklyn 1
Bubeneč 1
Carpi 1
Changsha 1
Chungnam 1
Crotone 1
Edinburgh 1
Frankfurt am Main 1
Fuzhou 1
Grafing 1
Haikou 1
Hebei 1
Kagoya 1
Lausanne 1
Leipzig 1
Lishui 1
Los Angeles 1
Marseille 1
Menlo Park 1
Miami 1
Munich 1
Nanchang 1
Shenyang 1
Taipei 1
Trento 1
Xian 1
Zurich 1
Totale 449
Nome #
Si and Sn doping of ε-Ga2O3 layers 95
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 73
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 69
The real structure of ε-Ga2O3 and its relation to κ-phase 60
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 58
Gallium Oxide: A Rising Star in The Semiconductor Realm 56
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 51
HeteroSiC & WASMPE 2013 48
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 37
Characterization of GaN/InGaN hetero-structures by SEM and CL 26
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 18
Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL 17
Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 13
Totale 621
Categoria #
all - tutte 2.385
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.385


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202086 15 6 2 4 6 17 8 5 3 11 4 5
2020/202128 0 5 0 1 3 1 2 2 12 1 1 0
2021/202264 5 2 0 6 17 4 6 1 3 4 0 16
2022/2023219 20 23 19 19 11 26 5 11 77 0 2 6
2023/2024150 15 7 0 17 8 21 10 13 10 10 10 29
2024/20255 5 0 0 0 0 0 0 0 0 0 0 0
Totale 621