: Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors.

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates / Girolami, Marco; Bosi, Matteo; Pettinato, Sara; Ferrari, Claudio; Lolli, Riccardo; Seravalli, Luca; Serpente, Valerio; Mastellone, Matteo; Trucchi, Daniele M.; Fornari, Roberto. - In: MATERIALS. - ISSN 1996-1944. - 17:2(2024). [10.3390/ma17020519]

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Bosi, Matteo;Lolli, Riccardo;Fornari, Roberto
2024-01-01

Abstract

: Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors.
2024
Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates / Girolami, Marco; Bosi, Matteo; Pettinato, Sara; Ferrari, Claudio; Lolli, Riccardo; Seravalli, Luca; Serpente, Valerio; Mastellone, Matteo; Trucchi, Daniele M.; Fornari, Roberto. - In: MATERIALS. - ISSN 1996-1944. - 17:2(2024). [10.3390/ma17020519]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2970552
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