BORELLI, CARMINE
 Distribuzione geografica
Continente #
EU - Europa 235
NA - Nord America 149
AS - Asia 53
AF - Africa 3
SA - Sud America 1
Totale 441
Nazione #
US - Stati Uniti d'America 146
IT - Italia 101
IE - Irlanda 37
CN - Cina 30
FR - Francia 26
SE - Svezia 18
NL - Olanda 13
SG - Singapore 12
DE - Germania 11
FI - Finlandia 6
JP - Giappone 4
TR - Turchia 4
BE - Belgio 3
CA - Canada 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
NG - Nigeria 3
RU - Federazione Russa 3
GB - Regno Unito 2
KR - Corea 2
PT - Portogallo 2
RO - Romania 2
UA - Ucraina 2
AT - Austria 1
BR - Brasile 1
LV - Lettonia 1
PL - Polonia 1
TM - Turkmenistan 1
Totale 441
Città #
Dublin 37
Ann Arbor 33
Parma 31
Chandler 28
Strasbourg 20
Milan 19
Shanghai 16
Ashburn 12
Beijing 7
Singapore 7
Boardman 6
Helsinki 6
Segrate 5
Chicago 4
Dronten 4
Kocaeli 4
Marseille 4
New York 4
Brno 3
Houston 3
Lagos 3
Menlo Park 3
Princeton 3
Reggio Nell'emilia 3
Seattle 3
Bremen 2
Corroios 2
Fremont 2
Ghent 2
Glasgow 2
Guangzhou 2
Jacksonville 2
Jinju 2
Kilchberg 2
Legnano 2
Meppel 2
Munich 2
Ottawa 2
Piacenza 2
Reggio Emilia 2
Rome 2
Savona 2
Tokyo 2
Tomsk 2
Vanzago 2
Wilmington 2
Arcene 1
Ashgabat 1
Basel 1
Bergamo 1
Brussels 1
Cremona 1
Crotone 1
Dziecinow 1
Fairfield 1
Grafing 1
Hangzhou 1
Huskvarna 1
Laveno-Mombello 1
Leiden 1
Los Angeles 1
Phoenix 1
Riga 1
Rio de Janeiro 1
Robecco Pavese 1
Sacramento 1
Spilamberto 1
Taiyuan 1
Tappahannock 1
Toronto 1
Vienna 1
West Columbia 1
Totale 336
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 130
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 79
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 78
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 76
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 54
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 37
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 8
Totale 462
Categoria #
all - tutte 1.510
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.510


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202021 0 0 0 0 0 0 0 0 0 0 21 0
2020/202157 0 0 0 3 2 10 0 9 9 15 5 4
2021/202253 8 9 0 0 1 2 2 2 1 2 1 25
2022/2023183 25 13 10 13 24 17 15 5 42 4 11 4
2023/2024143 9 8 6 19 5 22 8 11 12 10 8 25
2024/20255 5 0 0 0 0 0 0 0 0 0 0 0
Totale 462