NIPOTI, ROBERTA
 Distribuzione geografica
Continente #
AS - Asia 228
NA - Nord America 218
EU - Europa 107
SA - Sud America 25
AF - Africa 7
Totale 585
Nazione #
US - Stati Uniti d'America 211
CN - Cina 88
SG - Singapore 84
IE - Irlanda 29
SE - Svezia 24
BR - Brasile 21
VN - Vietnam 21
FI - Finlandia 20
HK - Hong Kong 14
TR - Turchia 7
IT - Italia 6
NL - Olanda 6
ZA - Sudafrica 6
CA - Canada 5
DE - Germania 5
FR - Francia 5
BD - Bangladesh 4
AT - Austria 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
JP - Giappone 2
KR - Corea 2
MX - Messico 2
PL - Polonia 2
RU - Federazione Russa 2
AL - Albania 1
AM - Armenia 1
AR - Argentina 1
BE - Belgio 1
CG - Congo 1
GB - Regno Unito 1
ID - Indonesia 1
IN - India 1
IR - Iran 1
JO - Giordania 1
KZ - Kazakistan 1
UA - Ucraina 1
VE - Venezuela 1
Totale 585
Città #
Singapore 43
Chandler 37
Dublin 29
Santa Clara 26
Ashburn 22
Beijing 18
Hong Kong 14
Nanjing 13
Ho Chi Minh City 12
Shanghai 11
Dallas 8
Dearborn 8
Boardman 7
Helsinki 7
Los Angeles 7
San Jose 7
Wilmington 7
Johannesburg 6
Princeton 6
Hefei 5
Izmir 5
Strasbourg 5
Ann Arbor 4
Nanchang 4
Buffalo 3
Chengdu 3
Columbus 3
Hanoi 3
Hebei 3
Munich 3
Parma 3
Toronto 3
Casalecchio di Reno 2
Changsha 2
Hangzhou 2
Jacksonville 2
Jinan 2
Mexico City 2
Moscow 2
New York 2
Phoenix 2
San Francisco 2
Seattle 2
Stockholm 2
Tokyo 2
Vienna 2
Warsaw 2
Washington 2
Amman 1
Ankara 1
Atlanta 1
Bandung 1
Baotou 1
Boituva 1
Borås 1
Brno 1
Brooklyn 1
Buena Vista 1
Cachoeira do Sul 1
Campo Bom 1
Canoinhas 1
Caracas 1
Caxias do Sul 1
Contagem 1
Cranston 1
Curitiba 1
Da Nang 1
Daule 1
Dhaka 1
Florianópolis 1
Forest City 1
Fuzhou 1
Grand Rapids 1
Guangzhou 1
Guayaquil 1
Haiphong 1
Hải Dương 1
Jaboatão dos Guararapes 1
Jiaxing 1
Kansas City 1
Kocaeli 1
Kunming 1
Maceió 1
Maria Helena 1
Minneapolis 1
Modena 1
Monte Alto 1
Montreal 1
Norwalk 1
Oliveira 1
Orem 1
Palmeiras de Goiás 1
Paracuru 1
Pontes e Lacerda 1
Poplar 1
Porto Velho 1
Pune 1
Quảng Ngãi 1
Retirolândia 1
San Mateo 1
Totale 419
Nome #
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 124
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 120
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 114
Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC 83
Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication 82
Microwave Annealing of High Dose Al+ implanted 4H-SiC: Towards Device Fabrication 70
Totale 593
Categoria #
all - tutte 2.349
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.349


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20217 0 0 0 0 0 0 0 0 6 1 0 0
2021/202218 0 1 0 0 0 0 0 4 1 1 1 10
2022/2023112 14 11 10 13 5 15 0 6 35 0 1 2
2023/202445 4 2 1 2 3 9 3 5 1 5 1 9
2024/2025135 7 6 8 5 15 24 7 5 13 14 10 21
2025/2026180 28 22 30 27 70 3 0 0 0 0 0 0
Totale 593