PUZZANGHERA, MAURIZIO
 Distribuzione geografica
Continente #
NA - Nord America 395
EU - Europa 233
AS - Asia 158
Continente sconosciuto - Info sul continente non disponibili 4
AF - Africa 2
SA - Sud America 2
OC - Oceania 1
Totale 795
Nazione #
US - Stati Uniti d'America 389
CN - Cina 110
IT - Italia 57
IE - Irlanda 55
SE - Svezia 47
SG - Singapore 30
RO - Romania 16
TR - Turchia 16
FI - Finlandia 15
BE - Belgio 10
AT - Austria 9
CA - Canada 6
CZ - Repubblica Ceca 6
DE - Germania 6
EU - Europa 4
UA - Ucraina 3
CM - Camerun 2
GB - Regno Unito 2
IM - Isola di Man 2
NL - Olanda 2
SK - Slovacchia (Repubblica Slovacca) 2
CL - Cile 1
EC - Ecuador 1
FR - Francia 1
IN - India 1
NZ - Nuova Zelanda 1
TW - Taiwan 1
Totale 795
Città #
Chandler 69
Dublin 55
Ann Arbor 44
Parma 34
Dearborn 23
Singapore 23
Ashburn 21
Boardman 20
Shanghai 20
Houston 19
Nanjing 19
Wilmington 14
Princeton 11
Helsinki 10
Seattle 10
Izmir 9
Piacenza 8
Timisoara 8
Brussels 7
Kocaeli 7
Santa Clara 7
Hebei 6
Nanchang 6
Vienna 6
San Mateo 5
Shenyang 5
Woodbridge 5
Focsani 4
Horia 4
Toronto 4
Brno 3
Changsha 3
Hefei 3
Jiaxing 3
Kunming 3
Los Angeles 3
New York 3
Washington 3
Bratislava 2
Casalecchio di Reno 2
Douglas 2
Ferrara 2
Hangzhou 2
Jacksonville 2
Jinan 2
Modena 2
Montréal 2
Norwalk 2
Old Bridge 2
Shaoxing 2
Shenzhen 2
Amsterdam 1
Auckland 1
Beijing 1
Borås 1
Bosco Chiesanuova 1
Chengdu 1
Dalian 1
Dallas 1
Frankfurt am Main 1
Fremont 1
Fuzhou 1
Guangzhou 1
Jinhua 1
Milan 1
Munich 1
Nanning 1
Ningbo 1
Orange 1
Padova 1
Phoenix 1
Pune 1
Quito 1
Quzhou 1
San Diego 1
San Francisco 1
San Polo 1
Santiago 1
St Louis 1
Stockholm 1
Taiyuan 1
Tianjin 1
Yicheng 1
Totale 565
Nome #
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 134
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 85
The role of defects on forward current in 4h-sic p-i-n diodes 82
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 77
null 67
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 65
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 65
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 64
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 61
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 58
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 52
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 39
Totale 849
Categoria #
all - tutte 3.059
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.059


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202090 0 0 0 0 10 28 24 4 3 13 2 6
2020/202192 6 6 8 6 10 9 3 13 14 11 3 3
2021/202252 2 3 7 2 4 1 0 6 2 7 0 18
2022/2023245 34 21 20 12 17 33 0 18 73 2 11 4
2023/202490 6 12 2 3 6 20 12 6 2 7 2 12
2024/202572 17 15 22 12 6 0 0 0 0 0 0 0
Totale 849