PUZZANGHERA, MAURIZIO
 Distribuzione geografica
Continente #
NA - Nord America 448
EU - Europa 262
AS - Asia 179
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 4
AF - Africa 2
OC - Oceania 1
Totale 902
Nazione #
US - Stati Uniti d'America 442
CN - Cina 112
IT - Italia 58
IE - Irlanda 55
SG - Singapore 48
SE - Svezia 47
FI - Finlandia 21
TR - Turchia 17
RO - Romania 16
NL - Olanda 13
DE - Germania 11
BE - Belgio 10
AT - Austria 9
CA - Canada 6
CZ - Repubblica Ceca 6
RU - Federazione Russa 5
BR - Brasile 4
EU - Europa 4
UA - Ucraina 3
CM - Camerun 2
GB - Regno Unito 2
IM - Isola di Man 2
SK - Slovacchia (Repubblica Slovacca) 2
CL - Cile 1
EC - Ecuador 1
FR - Francia 1
IN - India 1
NZ - Nuova Zelanda 1
PL - Polonia 1
TW - Taiwan 1
Totale 902
Città #
Chandler 69
Dublin 55
Santa Clara 51
Ann Arbor 44
Parma 35
Singapore 31
Dearborn 23
Ashburn 21
Boardman 20
Shanghai 20
Houston 19
Nanjing 19
Helsinki 16
Wilmington 14
Princeton 11
Seattle 10
Izmir 9
Piacenza 8
Timisoara 8
Brussels 7
Kocaeli 7
Hebei 6
Nanchang 6
Vienna 6
Falkenstein 5
Moscow 5
San Mateo 5
Shenyang 5
Woodbridge 5
Council Bluffs 4
Focsani 4
Horia 4
Toronto 4
Brno 3
Changsha 3
Hefei 3
Jiaxing 3
Kunming 3
Los Angeles 3
New York 3
Washington 3
Bratislava 2
Casalecchio di Reno 2
Douglas 2
Ferrara 2
Hangzhou 2
Jacksonville 2
Jinan 2
Modena 2
Montréal 2
Norwalk 2
Old Bridge 2
Shaoxing 2
Shenzhen 2
Amsterdam 1
Auckland 1
Beijing 1
Borås 1
Bosco Chiesanuova 1
Canoinhas 1
Chengdu 1
Dalian 1
Dallas 1
Frankfurt am Main 1
Fremont 1
Fuzhou 1
Guangzhou 1
Jinhua 1
Köseköy 1
Milan 1
Munich 1
Nanning 1
Nanyang 1
Ningbo 1
Orange 1
Padova 1
Paracambi 1
Phoenix 1
Pune 1
Quito 1
Quzhou 1
Rio Largo 1
San Diego 1
San Francisco 1
San Polo 1
Santiago 1
St Louis 1
Stockholm 1
São Pedro 1
Taiyuan 1
Tianjin 1
Warsaw 1
Weifang 1
Yicheng 1
Totale 646
Nome #
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 144
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 94
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 92
The role of defects on forward current in 4h-sic p-i-n diodes 92
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 75
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 74
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 73
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 69
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 67
null 67
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 60
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 49
Totale 956
Categoria #
all - tutte 3.570
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.570


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202021 0 0 0 0 0 0 0 0 0 13 2 6
2020/202192 6 6 8 6 10 9 3 13 14 11 3 3
2021/202252 2 3 7 2 4 1 0 6 2 7 0 18
2022/2023245 34 21 20 12 17 33 0 18 73 2 11 4
2023/202490 6 12 2 3 6 20 12 6 2 7 2 12
2024/2025179 17 15 22 12 25 47 3 7 18 13 0 0
Totale 956