PUZZANGHERA, MAURIZIO
 Distribuzione geografica
Continente #
NA - Nord America 363
EU - Europa 229
AS - Asia 109
Continente sconosciuto - Info sul continente non disponibili 4
AF - Africa 2
OC - Oceania 1
SA - Sud America 1
Totale 709
Nazione #
US - Stati Uniti d'America 357
CN - Cina 89
IE - Irlanda 55
IT - Italia 55
SE - Svezia 47
RO - Romania 16
TR - Turchia 16
FI - Finlandia 15
BE - Belgio 10
AT - Austria 9
CA - Canada 6
CZ - Repubblica Ceca 5
DE - Germania 5
EU - Europa 4
UA - Ucraina 3
CM - Camerun 2
GB - Regno Unito 2
IM - Isola di Man 2
NL - Olanda 2
SG - Singapore 2
SK - Slovacchia (Repubblica Slovacca) 2
CL - Cile 1
FR - Francia 1
IN - India 1
NZ - Nuova Zelanda 1
TW - Taiwan 1
Totale 709
Città #
Chandler 69
Dublin 55
Ann Arbor 44
Parma 34
Dearborn 23
Ashburn 21
Houston 19
Nanjing 19
Wilmington 14
Shanghai 13
Princeton 11
Helsinki 10
Seattle 10
Izmir 9
Piacenza 8
Timisoara 8
Boardman 7
Brussels 7
Kocaeli 7
Hebei 6
Nanchang 6
Vienna 6
San Mateo 5
Shenyang 5
Woodbridge 5
Focsani 4
Horia 4
Toronto 4
Changsha 3
Hefei 3
Jiaxing 3
Kunming 3
Los Angeles 3
New York 3
Washington 3
Bratislava 2
Brno 2
Casalecchio di Reno 2
Douglas 2
Ferrara 2
Hangzhou 2
Jacksonville 2
Jinan 2
Montréal 2
Norwalk 2
Old Bridge 2
Shaoxing 2
Amsterdam 1
Auckland 1
Beijing 1
Borås 1
Bosco Chiesanuova 1
Chengdu 1
Frankfurt am Main 1
Fremont 1
Fuzhou 1
Guangzhou 1
Jinhua 1
Milan 1
Modena 1
Nanning 1
Ningbo 1
Orange 1
Phoenix 1
Pune 1
Quzhou 1
San Diego 1
San Polo 1
Santiago 1
St Louis 1
Stockholm 1
Taiyuan 1
Tianjin 1
Yicheng 1
Totale 505
Nome #
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes 126
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 78
The role of defects on forward current in 4h-sic p-i-n diodes 72
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters 68
null 67
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC 58
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics 58
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC 56
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 54
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 48
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C 46
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes 32
Totale 763
Categoria #
all - tutte 2.294
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.294


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201921 0 0 0 0 0 0 0 0 0 0 19 2
2019/2020138 33 9 2 4 10 28 24 4 3 13 2 6
2020/202192 6 6 8 6 10 9 3 13 14 11 3 3
2021/202252 2 3 7 2 4 1 0 6 2 7 0 18
2022/2023245 34 21 20 12 17 33 0 18 73 2 11 4
2023/202476 6 12 2 3 6 20 12 6 2 7 0 0
Totale 763