statistiche ricercatore

Continente	#
NA - Nord America	720
AS - Asia	461
EU - Europa	299
SA - Sud America	59
AF - Africa	18
Continente sconosciuto - Info sul continente non disponibili	4
OC - Oceania	2
Totale	1.563

Nazione	#
US - Stati Uniti d'America	704
SG - Singapore	152
CN - Cina	143
VN - Vietnam	70
IT - Italia	59
IE - Irlanda	55
SE - Svezia	51
BR - Brasile	47
HK - Hong Kong	30
FI - Finlandia	22
TR - Turchia	20
RO - Romania	16
DE - Germania	14
ZA - Sudafrica	14
NL - Olanda	13
CA - Canada	12
FR - Francia	12
GB - Regno Unito	11
BE - Belgio	10
AT - Austria	9
BD - Bangladesh	9
IN - India	9
CZ - Repubblica Ceca	6
UA - Ucraina	6
IQ - Iraq	5
JP - Giappone	5
RU - Federazione Russa	5
AR - Argentina	4
EU - Europa	4
MX - Messico	4
PL - Polonia	4
EC - Ecuador	3
CM - Camerun	2
ID - Indonesia	2
IM - Isola di Man	2
KZ - Kazakistan	2
PK - Pakistan	2
SK - Slovacchia (Repubblica Slovacca)	2
TW - Taiwan	2
AE - Emirati Arabi Uniti	1
CL - Cile	1
CO - Colombia	1
ES - Italia	1
HU - Ungheria	1
JO - Giordania	1
KE - Kenya	1
KR - Corea	1
MY - Malesia	1
NP - Nepal	1
NZ - Nuova Zelanda	1
OM - Oman	1
PE - Perù	1
PG - Papua Nuova Guinea	1
PH - Filippine	1
PY - Paraguay	1
SA - Arabia Saudita	1
SY - Repubblica araba siriana	1
TN - Tunisia	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	1.563

Nome	#
Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes	194
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p⁺-i-n Diode With Al⁺ Ion-Implanted Emitters	156
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area	154
The role of defects on forward current in 4h-sic p-i-n diodes	148
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4Ωcm2 specific resistance on 0.1-1 Ωcm p-type 4H-SiC	147
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics	146
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing	139
Ni-Al-Ti ohmic contacts on 1 x1020 cm-3 Al+ ion implanted 4H-SiC	128
Thermal stability of 1x1020 cm-3 Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 °C	122
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing	113
Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes	103
null	67
Totale	1.617

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	17	0	0	0	0	0	0	0	0	0	11	3	3
2021/2022	52	2	3	7	2	4	1	0	6	2	7	0	18
2022/2023	245	34	21	20	12	17	33	0	18	73	2	11	4
2023/2024	90	6	12	2	3	6	20	12	6	2	7	2	12
2024/2025	253	17	15	22	12	25	47	3	7	18	27	26	34
2025/2026	587	53	52	56	94	111	35	73	12	57	44	0	0
Totale													1.617