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Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) 1-gen-2020 Mazzolini, P.; Falkenstein, A.; Wouters, C.; Schewski, R.; Markurt, T.; Galazka, Z.; Martin, M.; Albrecht, M.; Bierwagen, O.
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 1-gen-2020 Bosi, M.; Mazzolini, P.; Seravalli, L.; Fornari, R.
Isotopic study of Raman active phonon modes in β-Ga2O3 1-gen-2021 Janzen, Benjamin M.; Mazzolini, Piero; Gillen, Roland; Falkenstein, Andreas; Martin, Manfred; Tornatzky, Hans; Maultzsch, Janina; Bierwagen, Oliver; Wagner, Markus R.
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 1-gen-2021 Bosi, Matteo; Seravalli, Luca; Mazzolini, Piero; Mezzadri, Francesco; Fornari, Roberto
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 1-gen-2021 Janzen, Benjamin M.; Mazzolini, Piero; Gillen, Roland; Peltason, Vivien F. S.; Grote, Linus P.; Maultzsch, Janina; Fornari, Roberto; Bierwagen, Oliver; Wagner, Markus R.
Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor 1-gen-2021 Xu, Haiwan; Wu, Rui; Zhang, Jia-Ye; Han, Wenqiao; Chen, Lang; Liang, Xuan; Haw, Choon Y.; Mazzolini, Piero; Bierwagen, Oliver; Qi, Dong-Chen; Zhang, Kelvin H. L.
Tackling Disorder in γ-Ga2 O3 1-gen-2022 Ratcliff, Laura E; Oshima, Takayoshi; Nippert, Felix; Janzen, Benjamin M; Kluth, Elias; Goldhahn, Rüdiger; Feneberg, Martin; Mazzolini, Piero; Bierwagen, Oliver; Wouters, Charlotte; Nofal, Musbah; Albrecht, Martin; Swallow, Jack E N; Jones, Leanne A H; Thakur, Pardeep K; Lee, Tien-Lin; Kalha, Curran; Schlueter, Christoph; Veal, Tim D; Varley, Joel B; Wagner, Markus R; Regoutz, Anna
Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga2O3 1-gen-2022 Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Hoffmann, G.; L??hnemann, J.; Martin, M.; Mazzolini, P.
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 1-gen-2022 Parisini, A.; Mazzolini, P.; Bierwagen, O.; Borelli, C.; Egbo, K.; Sacchi, A.; Bosi, M.; Seravalli, L.; Tahraoui, A.; Fornari, R.
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 1-gen-2023 Mazzolini, Piero; Fogarassy, Zsolt; Parisini, Antonella; Mezzadri, Francesco; Diercks, David; Bosi, Matteo; Seravalli, Luca; Sacchi, Anna; Spaggiari, Giulia; Bersani, Danilo; Bierwagen, Oliver; Janzen, Benjamin Moritz; Marggraf, Marcella Naomi; Wagner, Markus R.; Cora, Ildiko; Pécz, Béla; Tahraoui, Abbes; Bosio, Alessio; Borelli, Carmine; Leone, Stefano; Fornari, Roberto
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 1-gen-2023 Rajabi Kalvani, Payam; Parisini, Antonella; Sozzi, Giovanna; Borelli, Carmine; Mazzolini, Piero; Bierwagen, Oliver; Vantaggio, Salvatore; Egbo, Kingsley; Bosi, Matteo; Seravalli, Luca; Fornari, Roberto
Disorder–Order Transition in Ga2O3 and Its Solid Solution with In2O3 upon Thermal Annealing 1-gen-2023 Reis, A.; Hanke, M.; Bierwagen, O.; Trampert, A.; Mazzolini, P.; Welter, E.
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 1-gen-2024 Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R.
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 1-gen-2024 Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R.
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 1-gen-2024 Tsai, Yuhua; Hashimoto, Yusuke; Sun, Zexu; Moriki, Takuya; Tadamura, Takashi; Nagata, Takahiro; Mazzolini, Piero; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Matsushita, Tomohiro; Yamashita, Yoshiyuki
Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3 1-gen-2024 Wouters, Charlotte; Nofal, Musbah; Mazzolini, Piero; Zhang, Jijun; Remmele, Thilo; Kwasniewski, Albert; Bierwagen, Oliver; Albrecht, Martin
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 1-gen-2024 Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo
Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement 1-gen-2024 Mazzolini, Piero; Wouters, Charlotte; Albrecht, Martin; Falkenstein, Andreas; Martin, Manfred; Vogt, Patrick; Bierwagen, Oliver
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