Sfoglia per Autore
Near-band-edge Absorption and Positron Trapping Under Illumination In Semiinsulating Gaas - Role of As Vacancies
1995-01-01 C., Leberre; C., Corbel; R., Mih; M. R., Brozel; S., Tuzemen; S., Kuisma; K., Saarinen; P., Hautojarvi; Fornari, Roberto
Evidence of 2 Kinds of Acceptors In Undoped Semiinsulating Gaas - Positron Trapping At Gallium Vacancies and Negative-ions
1995-01-01 C., Leberre; C., Corbel; K., Saarinen; S., Kuisma; P., Hautojarvi; Fornari, Roberto
Properties of thermally annealed undoped and sulphur doped InP wafers
1995-01-01 Fornari, Roberto; J. L., Weyher; S., Krawczyk; F., Nuban; C., Corbel; M., Tornqvist
Magnetic properties of Fe3(Ga1−xSbx)2
1995-01-01 M., Monciardini; L., Pareti; G., Turilli; Fornari, Roberto; A., Paoluzi; F., Albertini; O., Moze; Calestani, Gianluca
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers
1996-01-01 Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide
1996-01-01 Fornari, Roberto; M., Moriglioni; M., Thirumavalavan; A., Zappettini; M., Curti; G., Mignoni; M., Locci
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing
1996-01-01 Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.; Chearkaoui, K.; Marrakchi, G.
Photocurrent contrast in semi-insulating Fe-doped InP
1996-01-01 A., Alvarez; M., Avella; J., Jimenez; M. A., Gonzalez; Fornari, Roberto
A study of iron incorporation in LEG-grown indium phosphide
1996-01-01 Fornari, Roberto; E., Gilioli; M., Moriglioni; M., Thirumavalavan; A., Zappettini
Photocurrent mapping of Fe-doped semi-insulating InP
1996-01-01 J., Jimenez; M., Avella; A., Alvarez; M., Gonzalez; Fornari, Roberto
Determination of cadmium in indium phosphide by electrothermal atomic absorption spectrometry and ion-selective electrode potentiometry
1997-01-01 M., Taddia; D., Ranno; Fornari, Roberto
Growth of semi-insulating InP with uniform axial Fe doping by a double-crucible LEC technique
1997-01-01 Fornari, Roberto; M., Thirumavalavan; E., Gilioli; A., Sentiri; A., Zappettini; G., Mignoni; G., Zuccalli
Homogeneity of Fe-doped InP wafers using optical microprobes
1997-01-01 L. F., Sanz; M. A., Gonzalez; M., Avella; A., Alvarez; J., Jimenez; Fornari, Roberto
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique
1997-01-01 Fornari, Roberto; E., Gilioli; G., Mignoni; M., Masi
Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing
1997-01-01 A., Zappettini; Fornari, Roberto; Capelletti, Rosanna
Study of the homogeneity of Fe-doped semiinsulating InP wafers
1997-01-01 Jimenez, J.; Fornari, R.; Curti, M.; de la Puente, E.; Avella, M.; Sanz, L. F.; Gonzalez, M. A.; Alvarez, A.
Homogeneity of thermally annealed Fe-doped InP wafers
1997-01-01 Fornari, Roberto; E., Gilioli; A., Sentiri; G., Mignoni; M., Avella; J., Jimenez; A., Alvarez; M. A., Gonzalez
Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing
1997-01-01 M., Avella; J., Jimenez; A., Alvarez; Fornari, Roberto; E., Gilioli; A., Sentiri
Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production
1997-01-01 Fornari, Roberto; A., Zappettini; E., Gombia; R., Mosca; K., Cherkaoui; G., Marrakchi
Thoretical and technological aspects of crystal growth
1998-01-01 Fornari, Roberto
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Near-band-edge Absorption and Positron Trapping Under Illumination In Semiinsulating Gaas - Role of As Vacancies | 1-gen-1995 | C., Leberre; C., Corbel; R., Mih; M. R., Brozel; S., Tuzemen; S., Kuisma; K., Saarinen; P., Hautojarvi; Fornari, Roberto | |
Evidence of 2 Kinds of Acceptors In Undoped Semiinsulating Gaas - Positron Trapping At Gallium Vacancies and Negative-ions | 1-gen-1995 | C., Leberre; C., Corbel; K., Saarinen; S., Kuisma; P., Hautojarvi; Fornari, Roberto | |
Properties of thermally annealed undoped and sulphur doped InP wafers | 1-gen-1995 | Fornari, Roberto; J. L., Weyher; S., Krawczyk; F., Nuban; C., Corbel; M., Tornqvist | |
Magnetic properties of Fe3(Ga1−xSbx)2 | 1-gen-1995 | M., Monciardini; L., Pareti; G., Turilli; Fornari, Roberto; A., Paoluzi; F., Albertini; O., Moze; Calestani, Gianluca | |
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers | 1-gen-1996 | Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M. | |
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide | 1-gen-1996 | Fornari, Roberto; M., Moriglioni; M., Thirumavalavan; A., Zappettini; M., Curti; G., Mignoni; M., Locci | |
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing | 1-gen-1996 | Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.; Chearkaoui, K.; Marrakchi, G. | |
Photocurrent contrast in semi-insulating Fe-doped InP | 1-gen-1996 | A., Alvarez; M., Avella; J., Jimenez; M. A., Gonzalez; Fornari, Roberto | |
A study of iron incorporation in LEG-grown indium phosphide | 1-gen-1996 | Fornari, Roberto; E., Gilioli; M., Moriglioni; M., Thirumavalavan; A., Zappettini | |
Photocurrent mapping of Fe-doped semi-insulating InP | 1-gen-1996 | J., Jimenez; M., Avella; A., Alvarez; M., Gonzalez; Fornari, Roberto | |
Determination of cadmium in indium phosphide by electrothermal atomic absorption spectrometry and ion-selective electrode potentiometry | 1-gen-1997 | M., Taddia; D., Ranno; Fornari, Roberto | |
Growth of semi-insulating InP with uniform axial Fe doping by a double-crucible LEC technique | 1-gen-1997 | Fornari, Roberto; M., Thirumavalavan; E., Gilioli; A., Sentiri; A., Zappettini; G., Mignoni; G., Zuccalli | |
Homogeneity of Fe-doped InP wafers using optical microprobes | 1-gen-1997 | L. F., Sanz; M. A., Gonzalez; M., Avella; A., Alvarez; J., Jimenez; Fornari, Roberto | |
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique | 1-gen-1997 | Fornari, Roberto; E., Gilioli; G., Mignoni; M., Masi | |
Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing | 1-gen-1997 | A., Zappettini; Fornari, Roberto; Capelletti, Rosanna | |
Study of the homogeneity of Fe-doped semiinsulating InP wafers | 1-gen-1997 | Jimenez, J.; Fornari, R.; Curti, M.; de la Puente, E.; Avella, M.; Sanz, L. F.; Gonzalez, M. A.; Alvarez, A. | |
Homogeneity of thermally annealed Fe-doped InP wafers | 1-gen-1997 | Fornari, Roberto; E., Gilioli; A., Sentiri; G., Mignoni; M., Avella; J., Jimenez; A., Alvarez; M. A., Gonzalez | |
Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing | 1-gen-1997 | M., Avella; J., Jimenez; A., Alvarez; Fornari, Roberto; E., Gilioli; A., Sentiri | |
Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production | 1-gen-1997 | Fornari, Roberto; A., Zappettini; E., Gombia; R., Mosca; K., Cherkaoui; G., Marrakchi | |
Thoretical and technological aspects of crystal growth | 1-gen-1998 | Fornari, Roberto |
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