The homogeneity of semiinsulating Fe-doped InP wafers is studied using mapping techniques, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). These techniques allow to map with a micrometric spatial resolution the distribution of electrically active levels, in particular substitutional iron levels, Fe2+ and Fe3+. The correlation between both measurements allows to obtain information about the local compensation in terms of the [Fe3++Fe2+]/[Fe2+] ratio. Samples thermally treated were studied in order to analyse the consequences of the annealing on the homogeneity.
Study of the homogeneity of Fe-doped semiinsulating InP wafers / Jimenez, J.; Fornari, R.; Curti, M.; de la Puente, E.; Avella, M.; Sanz, L. F.; Gonzalez, M. A.; Alvarez, A.. - 484:(1997), pp. 625-630. (Intervento presentato al convegno Proceedings of the 1997 MRS Fall Symposium tenutosi a Boston, MA, USA, nel 1997) [10.1557/proc-484-625].
Study of the homogeneity of Fe-doped semiinsulating InP wafers
Fornari R.Conceptualization
;
1997-01-01
Abstract
The homogeneity of semiinsulating Fe-doped InP wafers is studied using mapping techniques, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). These techniques allow to map with a micrometric spatial resolution the distribution of electrically active levels, in particular substitutional iron levels, Fe2+ and Fe3+. The correlation between both measurements allows to obtain information about the local compensation in terms of the [Fe3++Fe2+]/[Fe2+] ratio. Samples thermally treated were studied in order to analyse the consequences of the annealing on the homogeneity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
