As-grown Fe-doped semiconducting InP samples convert to semiinsulating with high resistivity and good mobility when annealed under appropriate conditions. This provides the opportunity for obtaining semiinsulating InP with low Fe content. Lightly Fe-doped InP samples were annealed under vacuum or in P ambient. The annealing parameters together with the results of an extensive characterization of the treated samples are presented. The conductivity drop was seen to be related to a considerable loss of shallow donors.
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing / Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.; Chearkaoui, K.; Marrakchi, G.. - (1996), pp. 292-295. (Intervento presentato al convegno 8th International Conference on Indium Phosphide and Related Materials tenutosi a Schwabisch Gmund, Germany nel 1996).
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing
Fornari R.
Methodology
;
1996-01-01
Abstract
As-grown Fe-doped semiconducting InP samples convert to semiinsulating with high resistivity and good mobility when annealed under appropriate conditions. This provides the opportunity for obtaining semiinsulating InP with low Fe content. Lightly Fe-doped InP samples were annealed under vacuum or in P ambient. The annealing parameters together with the results of an extensive characterization of the treated samples are presented. The conductivity drop was seen to be related to a considerable loss of shallow donors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
