Sfoglia per Autore
Cadmium Segregation In Lec-grown Inp
1991-01-01 Fornari, Roberto; M., Taddia; D., Ranno
Deep level investigation In Fe-doped semi-insulating indium phosphide crystals
1992-01-01 Fornari, R.; Santic, B.; Desnica, U.
Time-of-flight Neutron-diffraction Investigation of Temperature Factors In the Zn Blende Semiconductor Inp
1992-01-01 C., Ferrari; C., Bocchi; O., Moze; C. C., Wilson; Fornari, Roberto
Inclusions In Co-doped Inp Single-crystals
1992-01-01 Fornari, Roberto; P., Franzosi; J., Kumar; G., Salviati
Stoichiometry-dependent Native Acceptor and Donor Levels In Ga-rich-n-type Gallium-arsenide
1992-01-01 G., Marrakchi; A., Kalboussi; G., Bremond; G., Guillot; S., Alaya; H., Maaref; Fornari, Roberto
Double doping: a method to decrease dislocation densities in LEC InP crystals
1993-01-01 Dedavid, B. A.; Fornari, R.; Moriglioni, M.; Kumar, J.; Anbukumar, S.; Battagliarin, M.; Sentimenti, E.
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies
1994-01-01 Fornari, Roberto
Study of the defect evolution with Fe content in semi-insulating InP by photoinduced current transient spectroscopy
1994-01-01 Zerrai, A.; Marracki, G.; Fornari, R.
Complementary Study of Indentation-induced Dislocations In GaAs and InP By Photoetching, Sem, Spl and Ebic
1994-01-01 J. L., Weyher; C., Frigeri; K., Schohe; S. K., Krawczyk; T., Wosinski; Fornari, Roberto
Hbr-k2cr2o7-h2o Etching System For Indium-phosphide
1994-01-01 J. L., Weyher; Fornari, Roberto; T., Gorog; J. J., Kelly; B., Erne
Preparation and Characterization of Semiinsulating Undoped Indium-phosphide
1994-01-01 Fornari, Roberto; A., Brinciotti; E., Gombia; R., Mosca; A., Sentiri
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp
1994-01-01 C., Frigeri; C., Ferrari; Fornari, Roberto; J. L., Weyher; F., Longo; G. M., Guadalupi
Hbr-k2cr2o7-h2o Etching System For Indium-phosphide
1994-01-01 J. L., Weyher; Fornari, Roberto; T., Gorog
Pressure of Phosphorus In Equilibrium With Solid Inp At Different Temperatures
1994-01-01 Fornari, Roberto; A., Brinciotti; A., Sentiri; T., Gorog; M., Curti; G., Zuccalli
Growth from the melt of bulk III-V semiconducting crystals
1995-01-01 Fornari, Roberto
Procedimento per la produzione di fette di InP drogato Ferro con caratteristiche semi-isolanti
1995-01-01 Fornari, Roberto
Magnetic properties of Fe3(Ga1−xSbx)2
1995-01-01 M., Monciardini; L., Pareti; G., Turilli; Fornari, Roberto; A., Paoluzi; F., Albertini; O., Moze; Calestani, Gianluca
Near-band-edge Absorption and Positron Trapping Under Illumination In Semiinsulating Gaas - Role of As Vacancies
1995-01-01 C., Leberre; C., Corbel; R., Mih; M. R., Brozel; S., Tuzemen; S., Kuisma; K., Saarinen; P., Hautojarvi; Fornari, Roberto
Properties of thermally annealed undoped and sulphur doped InP wafers
1995-01-01 Fornari, Roberto; J. L., Weyher; S., Krawczyk; F., Nuban; C., Corbel; M., Tornqvist
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn
1995-01-01 C., Frigeri; Fornari, Roberto; J. L., Weyher; G. M., Guadalupi; F., Longo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Cadmium Segregation In Lec-grown Inp | 1-gen-1991 | Fornari, Roberto; M., Taddia; D., Ranno | |
Deep level investigation In Fe-doped semi-insulating indium phosphide crystals | 1-gen-1992 | Fornari, R.; Santic, B.; Desnica, U. | |
Time-of-flight Neutron-diffraction Investigation of Temperature Factors In the Zn Blende Semiconductor Inp | 1-gen-1992 | C., Ferrari; C., Bocchi; O., Moze; C. C., Wilson; Fornari, Roberto | |
Inclusions In Co-doped Inp Single-crystals | 1-gen-1992 | Fornari, Roberto; P., Franzosi; J., Kumar; G., Salviati | |
Stoichiometry-dependent Native Acceptor and Donor Levels In Ga-rich-n-type Gallium-arsenide | 1-gen-1992 | G., Marrakchi; A., Kalboussi; G., Bremond; G., Guillot; S., Alaya; H., Maaref; Fornari, Roberto | |
Double doping: a method to decrease dislocation densities in LEC InP crystals | 1-gen-1993 | Dedavid, B. A.; Fornari, R.; Moriglioni, M.; Kumar, J.; Anbukumar, S.; Battagliarin, M.; Sentimenti, E. | |
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies | 1-gen-1994 | Fornari, Roberto | |
Study of the defect evolution with Fe content in semi-insulating InP by photoinduced current transient spectroscopy | 1-gen-1994 | Zerrai, A.; Marracki, G.; Fornari, R. | |
Complementary Study of Indentation-induced Dislocations In GaAs and InP By Photoetching, Sem, Spl and Ebic | 1-gen-1994 | J. L., Weyher; C., Frigeri; K., Schohe; S. K., Krawczyk; T., Wosinski; Fornari, Roberto | |
Hbr-k2cr2o7-h2o Etching System For Indium-phosphide | 1-gen-1994 | J. L., Weyher; Fornari, Roberto; T., Gorog; J. J., Kelly; B., Erne | |
Preparation and Characterization of Semiinsulating Undoped Indium-phosphide | 1-gen-1994 | Fornari, Roberto; A., Brinciotti; E., Gombia; R., Mosca; A., Sentiri | |
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp | 1-gen-1994 | C., Frigeri; C., Ferrari; Fornari, Roberto; J. L., Weyher; F., Longo; G. M., Guadalupi | |
Hbr-k2cr2o7-h2o Etching System For Indium-phosphide | 1-gen-1994 | J. L., Weyher; Fornari, Roberto; T., Gorog | |
Pressure of Phosphorus In Equilibrium With Solid Inp At Different Temperatures | 1-gen-1994 | Fornari, Roberto; A., Brinciotti; A., Sentiri; T., Gorog; M., Curti; G., Zuccalli | |
Growth from the melt of bulk III-V semiconducting crystals | 1-gen-1995 | Fornari, Roberto | |
Procedimento per la produzione di fette di InP drogato Ferro con caratteristiche semi-isolanti | 1-gen-1995 | Fornari, Roberto | |
Magnetic properties of Fe3(Ga1−xSbx)2 | 1-gen-1995 | M., Monciardini; L., Pareti; G., Turilli; Fornari, Roberto; A., Paoluzi; F., Albertini; O., Moze; Calestani, Gianluca | |
Near-band-edge Absorption and Positron Trapping Under Illumination In Semiinsulating Gaas - Role of As Vacancies | 1-gen-1995 | C., Leberre; C., Corbel; R., Mih; M. R., Brozel; S., Tuzemen; S., Kuisma; K., Saarinen; P., Hautojarvi; Fornari, Roberto | |
Properties of thermally annealed undoped and sulphur doped InP wafers | 1-gen-1995 | Fornari, Roberto; J. L., Weyher; S., Krawczyk; F., Nuban; C., Corbel; M., Tornqvist | |
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn | 1-gen-1995 | C., Frigeri; Fornari, Roberto; J. L., Weyher; G. M., Guadalupi; F., Longo |
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