The evolution of defects in liquid encapsulation Czochralski grown indium phosphide with different iron concentrations was investigated by the use of photoinduced current transient spectroscopy. This technique characterized the deep levels evolution in high resistivity semiconductors based on the analysis of the thermal behaviour of the photocurrent transient induced by periodic light pulses.
Study of the defect evolution with Fe content in semi-insulating InP by photoinduced current transient spectroscopy / Zerrai, A.; Marracki, G.; Fornari, R.. - (1994), pp. 91-93. (Intervento presentato al convegno Proceedings of the 6th International Conference on Indium Phosphide and Related Materials tenutosi a Santa Barbara, CA, USA, nel 1994).
Study of the defect evolution with Fe content in semi-insulating InP by photoinduced current transient spectroscopy
R. FornariConceptualization
1994-01-01
Abstract
The evolution of defects in liquid encapsulation Czochralski grown indium phosphide with different iron concentrations was investigated by the use of photoinduced current transient spectroscopy. This technique characterized the deep levels evolution in high resistivity semiconductors based on the analysis of the thermal behaviour of the photocurrent transient induced by periodic light pulses.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
