It has recently been reported that high-resistivity Fe-doped InP wafers can present very different compensation conditions. This gives rise to different mobility and conductivity characteristics. The high-resistivity InP samples can basically be assigned to three categories: (A) samples with high mobilities and thermal activation energies ≈ 0.60 eV; (B) samples with intermediate mobilities and activation energies below 0.60 eV; (C) samples with low mobilities and activation energies around 0.40 eV. Some reasons at the basis of the different physical properties exhibited by Fe-doped InP have already been discussed. In this work, new characterization techniques were applied in order to investigate other deep levels beside the main deep level due to iron.
|Titolo:||Deep level investigation In Fe-doped semi-insulating indium phosphide crystals|
FORNARI, Roberto (Corresponding)
|Data di pubblicazione:||1992|
|Appare nelle tipologie:||4.1b Atto convegno Volume|