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EnglishIt has recently been reported that high-resistivity Fe-doped InP wafers can present very different compensation conditions. This gives rise to different mobility and conductivity characteristics. The high-resistivity InP samples can basically be assigned to three categories: (A) samples with high mobilities and thermal activation energies ≈ 0.60 eV; (B) samples with intermediate mobilities and activation energies below 0.60 eV; (C) samples with low mobilities and activation energies around 0.40 eV. Some reasons at the basis of the different physical properties exhibited by Fe-doped InP have already been discussed. In this work, new characterization techniques were applied in order to investigate other deep levels beside the main deep level due to iron.
| Titolo: | Deep level investigation In Fe-doped semi-insulating indium phosphide crystals |
| Autori: | |
| Data di pubblicazione: | 1992 |
| Handle: | http://hdl.handle.net/11381/2886892 |
| ISBN: | 0-7803-0522-1 |
| Appare nelle tipologie: | 4.1b Atto convegno Volume |
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