It has recently been reported that high-resistivity Fe-doped InP wafers can present very different compensation conditions. This gives rise to different mobility and conductivity characteristics. The high-resistivity InP samples can basically be assigned to three categories: (A) samples with high mobilities and thermal activation energies ≈ 0.60 eV; (B) samples with intermediate mobilities and activation energies below 0.60 eV; (C) samples with low mobilities and activation energies around 0.40 eV. Some reasons at the basis of the different physical properties exhibited by Fe-doped InP have already been discussed. In this work, new characterization techniques were applied in order to investigate other deep levels beside the main deep level due to iron.

Deep level investigation In Fe-doped semi-insulating indium phosphide crystals / Fornari, R.; Santic, B.; Desnica, U.. - STAMPA. - (1992), pp. 511-514. ((Intervento presentato al convegno LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 tenutosi a Doubletree Hotel, usa nel 1992 [10.1109/ICIPRM.1992.235639].

Deep level investigation In Fe-doped semi-insulating indium phosphide crystals

Fornari R.
;
1992

Abstract

It has recently been reported that high-resistivity Fe-doped InP wafers can present very different compensation conditions. This gives rise to different mobility and conductivity characteristics. The high-resistivity InP samples can basically be assigned to three categories: (A) samples with high mobilities and thermal activation energies ≈ 0.60 eV; (B) samples with intermediate mobilities and activation energies below 0.60 eV; (C) samples with low mobilities and activation energies around 0.40 eV. Some reasons at the basis of the different physical properties exhibited by Fe-doped InP have already been discussed. In this work, new characterization techniques were applied in order to investigate other deep levels beside the main deep level due to iron.
0-7803-0522-1
Deep level investigation In Fe-doped semi-insulating indium phosphide crystals / Fornari, R.; Santic, B.; Desnica, U.. - STAMPA. - (1992), pp. 511-514. ((Intervento presentato al convegno LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 tenutosi a Doubletree Hotel, usa nel 1992 [10.1109/ICIPRM.1992.235639].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2886892
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