In this paper we shall report on the characteristics of LEC InP double doped with Cd and Te. Unlike (Cd,S)-doped material, (Cd, Te)-doped InP is p-type, with low-carrier concentration. In the following, the results of structural and electrical analysis carried out on several LEC InP crystals co-doped with Cd and Te are presented. The role of multiple doping as a strategy for dislocation reduction will also be discussed.
Double doping: a method to decrease dislocation densities in LEC InP crystals / Dedavid, B. A.; Fornari, R.; Moriglioni, M.; Kumar, J.; Anbukumar, S.; Battagliarin, M.; Sentimenti, E.. - (1993), pp. 644-647. (Intervento presentato al convegno 5th International Conf. on InP and Related Materials tenutosi a Paris, France nel 1993).
Double doping: a method to decrease dislocation densities in LEC InP crystals
Fornari R.Conceptualization
;
1993-01-01
Abstract
In this paper we shall report on the characteristics of LEC InP double doped with Cd and Te. Unlike (Cd,S)-doped material, (Cd, Te)-doped InP is p-type, with low-carrier concentration. In the following, the results of structural and electrical analysis carried out on several LEC InP crystals co-doped with Cd and Te are presented. The role of multiple doping as a strategy for dislocation reduction will also be discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
