GORNI, Marco
GORNI, Marco
Dipartimento di Chimica (attivo dal 20/07/2012 al 31/12/2016)
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time
2016-01-01 Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R.
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures
2013-01-01 M., Baldini; Gombia, Enos; Parisini, Antonella; Ghezzi, Carlo; Gorni, Marco
Electrical characterization of a buried GaSb p-n junction controlled by native defects
2014-01-01 Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
2020-01-01 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
2015-01-01 Parisini, Antonella; Gorni, Marco; Nath, A.; Belsito, L.; Rao, Mulpuri V.; Nipoti, R.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time | 1-gen-2016 | Fedeli, Paolo; Gorni, M.; Carnera, A.; Parisini, Antonella; Alfieri, G.; Grossner, U.; Nipoti, R. | |
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures | 1-gen-2013 | M., Baldini; Gombia, Enos; Parisini, Antonella; Ghezzi, Carlo; Gorni, Marco | |
Electrical characterization of a buried GaSb p-n junction controlled by native defects | 1-gen-2014 | Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo | |
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time | 1-gen-2020 | Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike | |
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC | 1-gen-2015 | Parisini, Antonella; Gorni, Marco; Nath, A.; Belsito, L.; Rao, Mulpuri V.; Nipoti, R. |