κ‑Ga2O3/(B)GaAs/GaAs Heterostructures: Study of Optically Active Defects, Design, and Modeling of Solar Cells Based on These Heterostructures

This work focuses on the steady-state luminescence of pure-phase κ-Ga2O3/GaAs and κ-Ga2O3/BGaAs/GaAs heterostructures grown by metal−organic chemical vapor deposition. The films were characterized by electron beam (e-beam) energydependent cathodoluminescence (CL) and steady-state photoluminescence (PL), supported by one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) simulation, to assess their possible application as intermediate energy band layers in solar cells. The power- and temperature-dependent PL and CL show that the luminescence in κ-Ga2O3 GaAs and κ-Ga2O3/a-BGaO/ BGaAs/GaAs heterostructures, where a-BGaO represents a thin amorphous BGaO interlayer between the κ-Ga2O3 film and BGaAs template, is dominated by donor−acceptor transitions. These transitions originated from point defect ensembles tuned by the disorder at the interface, which give rise to the formation of minibands. The boron-to-gallium substitution, boron segregation, gallium diffusion, and point defects clustering at the interface are supposed to play a crucial role in the luminescence mechanisms. The heterojunction features are promising in view of the development of a new class of active layers in photodetectors working in the visible and infrared regions. We propose a novel solar cell structure in which the insertion of a BGaAs/a-BGaO interlayer between GaAs and κ-Ga2O3 may substantially enhance the solar cell parameters. The SCAPS-1D simulations suggest that the κ-Ga2O3/a-BGaO/BGaAs/GaAs heterostructure may reach a powerconversion efficiency (PCE) of 23.76% with an open-circuit voltage (Voc) of 0.92 V, a short-circuit current density (Jsc) of 32.61mA/cm2, and a fill factor (FF) of 78.66%.