statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	389
SG - Singapore	142
IT - Italia	115
CN - Cina	59
VN - Vietnam	58
BR - Brasile	43
BD - Bangladesh	36
DE - Germania	28
FR - Francia	27
HK - Hong Kong	20
IE - Irlanda	20
NL - Olanda	17
IN - India	15
ZA - Sudafrica	15
PL - Polonia	14
AT - Austria	9
RU - Federazione Russa	9
SE - Svezia	8
ID - Indonesia	7
CA - Canada	6
GB - Regno Unito	6
KR - Corea	6
FI - Finlandia	5
JP - Giappone	5
MX - Messico	5
TR - Turchia	5
AR - Argentina	4
IQ - Iraq	4
CH - Svizzera	3
ES - Italia	3
PA - Panama	3
PK - Pakistan	3
AZ - Azerbaigian	2
BE - Belgio	2
CO - Colombia	2
JM - Giamaica	2
LT - Lituania	2
PY - Paraguay	2
VE - Venezuela	2
AE - Emirati Arabi Uniti	1
AL - Albania	1
CL - Cile	1
CZ - Repubblica Ceca	1
DZ - Algeria	1
EC - Ecuador	1
EG - Egitto	1
ET - Etiopia	1
GI - Gibilterra	1
HU - Ungheria	1
JO - Giordania	1
LA - Repubblica Popolare Democratica del Laos	1
MT - Malta	1
MY - Malesia	1
NG - Nigeria	1
NP - Nepal	1
NZ - Nuova Zelanda	1
OM - Oman	1
PR - Porto Rico	1
PT - Portogallo	1
RS - Serbia	1
SA - Arabia Saudita	1
SN - Senegal	1
TH - Thailandia	1
TM - Turkmenistan	1
TN - Tunisia	1
TW - Taiwan	1
UA - Ucraina	1
Totale	1.131

Nome	#
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction	214
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry	173
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films	151
Effect of lithium diffusion into Ga2O3 thin films	142
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments	113
Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy	109
null	107
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption	103
Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering	44
Control of electrical and structural properties in Ga2O3 epitaxy	4
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption	2
Totale	1.162

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	22	0	0	0	0	0	0	0	0	0	0	0	22
2022/2023	79	9	4	5	2	13	8	9	1	17	0	9	2
2023/2024	61	8	4	4	2	4	5	5	5	6	3	4	11
2024/2025	303	8	14	13	45	34	25	39	24	32	21	9	39
2025/2026	694	57	63	95	61	82	28	42	43	74	56	68	25
2026/2027	3	3	0	0	0	0	0	0	0	0	0	0	0
Totale													1.162