We present a magnetic characterisation of MnAs films grown by MOVPE on semiconductor substrates, for comparing the effect of thickness and substrate on their magnetic and magneto-thermal properties, with particular focus on the nature of the magneto-structural transition between the ferromagnetic hexagonal α-phase and the paramagnetic orthorhombic β-phase. The nature of this transformation depends on the presence of strain and turns out to be of second-order type for epitaxial-crystalline MnAs/(0 0 1)GaAs films and closer to a first-order type for polycrystalline MnAs/SiO2/Si films. The magnetocaloric effect at the transition has been estimated for thin film samples, resulting appreciably lower than that of bulk MnAs. © 2009 Elsevier B.V. All rights reserved.
Magnetic analysis of MnAs films grown on GaAs and Si substrates for potential spintronics and magnetocaloric applications / Solzi, M.; Pernechele, C.; Ghidini, M.; Natali, M.; Bolzan, M.. - In: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. - ISSN 0304-8853. - 322:9-12(2010), pp. 1565-1568. [10.1016/j.jmmm.2009.09.013]
Magnetic analysis of MnAs films grown on GaAs and Si substrates for potential spintronics and magnetocaloric applications
Solzi M.;Pernechele C.;Ghidini M.;
2010-01-01
Abstract
We present a magnetic characterisation of MnAs films grown by MOVPE on semiconductor substrates, for comparing the effect of thickness and substrate on their magnetic and magneto-thermal properties, with particular focus on the nature of the magneto-structural transition between the ferromagnetic hexagonal α-phase and the paramagnetic orthorhombic β-phase. The nature of this transformation depends on the presence of strain and turns out to be of second-order type for epitaxial-crystalline MnAs/(0 0 1)GaAs films and closer to a first-order type for polycrystalline MnAs/SiO2/Si films. The magnetocaloric effect at the transition has been estimated for thin film samples, resulting appreciably lower than that of bulk MnAs. © 2009 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.