The effect of the AlOx barrier thickness on magnetic and morphological properties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studied by means of atomic force microscopy, superconducting quantum interference device magnetometry, and nuclear magnetic resonance (NMR). All used techniques pointed out that the barrier thickness of 2 nm is required to obtain a magnetically good cobalt layer on top of Alq3. C59o NMR measurements revealed that the AlOx barrier gives rise to the formation of an interface layer with “defective” cobalt favoring growth of “bulk” cobalt with good magnetic properties.
Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor Alq3 / A. A., Sidorenko; Pernechele, Chiara; Lupo, Pierpaolo; Ghidini, Massimo; Solzi, Massimo; DE RENZI, Roberto; I., Bergenti; P., Graziosi; V., Dediu; L., Hueso; A. T., Hindmarch. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 97:(2010), pp. 162509-1-162509-3. [10.1063/1.3505495]
Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor Alq3
PERNECHELE, Chiara;LUPO, Pierpaolo;GHIDINI, Massimo;SOLZI, Massimo;DE RENZI, Roberto;
2010-01-01
Abstract
The effect of the AlOx barrier thickness on magnetic and morphological properties of Ta/Co/(AlOx)/Alq3/Si hybrid structures was systematically studied by means of atomic force microscopy, superconducting quantum interference device magnetometry, and nuclear magnetic resonance (NMR). All used techniques pointed out that the barrier thickness of 2 nm is required to obtain a magnetically good cobalt layer on top of Alq3. C59o NMR measurements revealed that the AlOx barrier gives rise to the formation of an interface layer with “defective” cobalt favoring growth of “bulk” cobalt with good magnetic properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
