We present the study of Co/organic semiconductor (OS) stacks both from the morphological and magnetic point of view. Co has been successfully used up to now as top contact of hybrid vertical devices. While the properties of Co grown on amorphous layers are well established, its deposition on soft materials presents critical aspects such as interfacial damage that affects its electrical and magnetic properties. In this work we focus on the influence of the morphology of the organic underlayer in the magnetic behavior of a Co thin film: tris(8-hydroxyquinoline) aluminum (Alq3) grown in different conditions by molecular beam evaporation have been considered. A further considered aspect is the effect of the presence of a thin oxide barrier (Al2O3) on the Co magnetic properties.
Growth Induced Anisotropy of Cobalt in Cobalt/Organic Semiconductor / Pernechele, C.; Bergenti, Ilaria; Solzi, M.; Ghidini, M.; Casoli, F.; Dediu, V.. - In: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. - ISSN 0304-8853. - 322:(2010), pp. 1251-1254. [10.1016/j.jmmm.2009.07.024]
Growth Induced Anisotropy of Cobalt in Cobalt/Organic Semiconductor
C. Pernechele;BERGENTI, Ilaria;M. Solzi;M. Ghidini;F. Casoli;
2010-01-01
Abstract
We present the study of Co/organic semiconductor (OS) stacks both from the morphological and magnetic point of view. Co has been successfully used up to now as top contact of hybrid vertical devices. While the properties of Co grown on amorphous layers are well established, its deposition on soft materials presents critical aspects such as interfacial damage that affects its electrical and magnetic properties. In this work we focus on the influence of the morphology of the organic underlayer in the magnetic behavior of a Co thin film: tris(8-hydroxyquinoline) aluminum (Alq3) grown in different conditions by molecular beam evaporation have been considered. A further considered aspect is the effect of the presence of a thin oxide barrier (Al2O3) on the Co magnetic properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
