Sfoglia per Autore
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
2006-01-01 F., Rossi; Pavesi, Maura; M., Meneghini; G., Salviati; Manfredi, Manfredo; G., Meneghesso; A., Castaldinii; A., Cavallinii; L., Rigutti; U., Strauss; U., Zehnder; E., Zanoni
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence
2006-01-01 F., Rossi; G., Salviati; Pavesi, Maura; Manfredi, Manfredo; M., Meneghinii; G., Meneghesso; E., Zanoni; U., Strauss
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes
2006-01-01 Pavesi, Maura; Manfredi, Manfredo; F., Rossi; M., Meneghini; E., Zanoni; U., Zehnder; U., Strauss
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs
2008-01-01 Pavesi, Maura; Manfredi, Manfredo; F., Rossi; M., Meneghini; G., Meneghesso; E., Zanoni; U., Zehnder
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique
2008-01-01 M., Zanichelli; Pavesi, Maura; A., Zappettini; L., Marchini; Manfredi, Manfredo
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes
2008-01-01 F., Rossi; G., Salviati; Pavesi, Maura; Manfredi, Manfredo; M., Meneghini; E., Zanoni; U., Zehnder
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs
2009-01-01 Pavesi, Maura; F., Rossi; Manfredi, Manfredo; G., Salviati; M., Meneghini; E., Zanoni
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes
2009-01-01 M., Meneghini; N., Trivellin; Pavesi, Maura; Manfredi, Manfredo; U., Zehnder; B., Hahn; G., Meneghesso; E., Zanoni
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques
2009-01-01 M., Zanichelli; Pavesi, Maura; A., Zappettini; L., Marchini; N., Auricchio; E., Caroli; Manfredi, Manfredo
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events
2010-01-01 M., Meneghini; A., Tazzoli; E., Ranzato; N., Trivellin; G., Meneghesso; E., Zanoni; Pavesi, Maura; Manfredi, Manfredo; R., Butendeich; U., Zehnder; B., Hahn
Electron and hole-related luminescence processes in Gate Injection Transistors
2010-01-01 Pavesi, Maura; Manfredi, Manfredo; T., Ueda; H., Ishida; T., Tanaka; D., Ueda; G., Meneghesso; E., Zanoni; M., Meneghini; M., Scamperle
On the role of Boron in CdTe and CdZnTe crystals
2011-01-01 Pavesi, Maura; L., Marchini; M., Zha; A., Zappettini; Zanichelli, Massimiliano; Manfredi, Manfredo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes | 1-gen-2006 | F., Rossi; Pavesi, Maura; M., Meneghini; G., Salviati; Manfredi, Manfredo; G., Meneghesso; A., Castaldinii; A., Cavallinii; L., Rigutti; U., Strauss; U., Zehnder; E., Zanoni | |
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence | 1-gen-2006 | F., Rossi; G., Salviati; Pavesi, Maura; Manfredi, Manfredo; M., Meneghinii; G., Meneghesso; E., Zanoni; U., Strauss | |
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes | 1-gen-2006 | Pavesi, Maura; Manfredi, Manfredo; F., Rossi; M., Meneghini; E., Zanoni; U., Zehnder; U., Strauss | |
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs | 1-gen-2008 | Pavesi, Maura; Manfredi, Manfredo; F., Rossi; M., Meneghini; G., Meneghesso; E., Zanoni; U., Zehnder | |
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique | 1-gen-2008 | M., Zanichelli; Pavesi, Maura; A., Zappettini; L., Marchini; Manfredi, Manfredo | |
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes | 1-gen-2008 | F., Rossi; G., Salviati; Pavesi, Maura; Manfredi, Manfredo; M., Meneghini; E., Zanoni; U., Zehnder | |
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs | 1-gen-2009 | Pavesi, Maura; F., Rossi; Manfredi, Manfredo; G., Salviati; M., Meneghini; E., Zanoni | |
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes | 1-gen-2009 | M., Meneghini; N., Trivellin; Pavesi, Maura; Manfredi, Manfredo; U., Zehnder; B., Hahn; G., Meneghesso; E., Zanoni | |
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques | 1-gen-2009 | M., Zanichelli; Pavesi, Maura; A., Zappettini; L., Marchini; N., Auricchio; E., Caroli; Manfredi, Manfredo | |
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events | 1-gen-2010 | M., Meneghini; A., Tazzoli; E., Ranzato; N., Trivellin; G., Meneghesso; E., Zanoni; Pavesi, Maura; Manfredi, Manfredo; R., Butendeich; U., Zehnder; B., Hahn | |
Electron and hole-related luminescence processes in Gate Injection Transistors | 1-gen-2010 | Pavesi, Maura; Manfredi, Manfredo; T., Ueda; H., Ishida; T., Tanaka; D., Ueda; G., Meneghesso; E., Zanoni; M., Meneghini; M., Scamperle | |
On the role of Boron in CdTe and CdZnTe crystals | 1-gen-2011 | Pavesi, Maura; L., Marchini; M., Zha; A., Zappettini; Zanichelli, Massimiliano; Manfredi, Manfredo |
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