In this work we provide the behavior in temperature of the unit cell parameters via variable temperature XRD for r-GeO2, r-TiO2 and r-GexTi1-xO2. Such data are collected on rutile powders and discussed in the framework of the heteroepitaxial growth of r-GeO2 on titania substrates. In this framework, we provide useful information considering various growth directions – i.e., (001), (110), (111), (100), (101) – discussing related in-plane misfit at room temperature as well as reasonable deposition temperatures and the possible role in engineering both strain and differences in the thermal expansion coefficients considering the thin film synthesis conditions.
Thermal expansion coefficients and unit cell parameters for r-GeO2 heteroepitaxy on r-TiO2/Ti1−x GexO2 / Mezzadri, F., Cicconi, G., Delmonte, D., Parisini, A., Mazzolini, P.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 129:6(2026). [10.1063/5.0339687]
Thermal expansion coefficients and unit cell parameters for r-GeO2 heteroepitaxy on r-TiO2/Ti1−x GexO2
F. Mezzadri
;G. Cicconi;A. Parisini;P. Mazzolini
2026-01-01
Abstract
In this work we provide the behavior in temperature of the unit cell parameters via variable temperature XRD for r-GeO2, r-TiO2 and r-GexTi1-xO2. Such data are collected on rutile powders and discussed in the framework of the heteroepitaxial growth of r-GeO2 on titania substrates. In this framework, we provide useful information considering various growth directions – i.e., (001), (110), (111), (100), (101) – discussing related in-plane misfit at room temperature as well as reasonable deposition temperatures and the possible role in engineering both strain and differences in the thermal expansion coefficients considering the thin film synthesis conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
