Main improvements in development of radiation detectors based on semi-insulating (SI) GaAs and InP is demonstrated and discussed. It should be accounted that advantage of the low cost detector is related to SI materials only. We developed a modified technology of an "extraction electrode" system using peculiar MBE or implantation buffer prior evaporation of the ohmic metallisation. Development of 32-pixel line chip based on bulk SI GaAs named "SAMO" was finished in our laboratory by the end of 1999. Measured I-V curves (300 K) and pulse height spectra for 59.5 and 122 keV photon detection are presented. We should note that our effort in fabrication of monolithic pixel array with SI InP was not successful till now due to very high transconductance between active pixels as a result of quasi-ohmic transport behaviour of the structure.
Performance of radiation detectors based on semi-insulating GaAs and InP / Dubecky, F; Huran, J; Darmo, J; Zat'Ko, B; Krempasky, M; Bohácek, P; Sekácová, M; Besse, I; Necas, V; Hotovy, I; Fornari, R; Gombia, E; Pelfer, Pg. - (2000), pp. 437-441. (Intervento presentato al convegno 5th Italian Conference on Sensors and Microsystems tenutosi a Lecce nel FEB 12-16, 2000) [10.1142/9789812792013_0076].
Performance of radiation detectors based on semi-insulating GaAs and InP
Fornari, R;
2000-01-01
Abstract
Main improvements in development of radiation detectors based on semi-insulating (SI) GaAs and InP is demonstrated and discussed. It should be accounted that advantage of the low cost detector is related to SI materials only. We developed a modified technology of an "extraction electrode" system using peculiar MBE or implantation buffer prior evaporation of the ohmic metallisation. Development of 32-pixel line chip based on bulk SI GaAs named "SAMO" was finished in our laboratory by the end of 1999. Measured I-V curves (300 K) and pulse height spectra for 59.5 and 122 keV photon detection are presented. We should note that our effort in fabrication of monolithic pixel array with SI InP was not successful till now due to very high transconductance between active pixels as a result of quasi-ohmic transport behaviour of the structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
