At the present, attention of many researchers is focused on Sb2Se3, Sb2S3 and Sb2(Sx, Se1-x)3 chalcogenide compounds. This is due to the physical properties of these materials, such as p-type conductivity, band gap Eg = 1.1÷1.8 eV, high absorption coefficient 105cm-1 (for visible solar radiation), low melting point (823K and 885K for Sb2Se3 and for Sb2S3 respectively) and high partial pressure, which make these materials suitable for use as an absorbing layer in high efficiency thin film solar cells. In this work, we presented the effect of the Sb/Se ratio on the structural, morphological, and electrical properties of SbxSey films. SbxSey films were fabricated by chemical molecular beam deposition (CMBD) method from Sb and Se precursors at a substrate temperature of 500 at atmospheric pressure hydrogen flow. The scanning electron microscope and X-ray diffraction analysis show that all films have a crystallite size of 2÷3 μm and an orthorhombic crystal structure. The electrical conductivity of the films varies in the range of ~10-5÷ 102(Ohm • cm)-1 depending on Sb/Se ratio which was measured by van der Pauw method.
Effect of the Sb/Se Ratio on the Structural, Morphological and Electrical Properties of SbxSey Films / Razykov, T. M.; Bosio, A.; Pasini, S.; Ergashev, B. A.; Isakov, D. Z.; Kouchkarov, K. M.; Khurramov, R. R.; Makhmudov, M. A.; Mavlonov, A. A.; Romeo, A.; Romeo, N.; Utamuradova, Sh. B.. - ELETTRONICO. - (2022), pp. 328-330. (Intervento presentato al convegno World Congress on Photovoltaic Energy Conversion tenutosi a Milano nel Settembre 26-30) [10.4229/wcpec-82022-2av.2.7].
Effect of the Sb/Se Ratio on the Structural, Morphological and Electrical Properties of SbxSey Films
A. BosioValidation
;S. PasiniMembro del Collaboration Group
;N. RomeoMembro del Collaboration Group
;
2022-01-01
Abstract
At the present, attention of many researchers is focused on Sb2Se3, Sb2S3 and Sb2(Sx, Se1-x)3 chalcogenide compounds. This is due to the physical properties of these materials, such as p-type conductivity, band gap Eg = 1.1÷1.8 eV, high absorption coefficient 105cm-1 (for visible solar radiation), low melting point (823K and 885K for Sb2Se3 and for Sb2S3 respectively) and high partial pressure, which make these materials suitable for use as an absorbing layer in high efficiency thin film solar cells. In this work, we presented the effect of the Sb/Se ratio on the structural, morphological, and electrical properties of SbxSey films. SbxSey films were fabricated by chemical molecular beam deposition (CMBD) method from Sb and Se precursors at a substrate temperature of 500 at atmospheric pressure hydrogen flow. The scanning electron microscope and X-ray diffraction analysis show that all films have a crystallite size of 2÷3 μm and an orthorhombic crystal structure. The electrical conductivity of the films varies in the range of ~10-5÷ 102(Ohm • cm)-1 depending on Sb/Se ratio which was measured by van der Pauw method.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
