Lightly Fe-doped semiconducting InP samples have been rendered semi-insulating by thermal annealing and subsequently studied by Hall effect, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). Hall measurement shows that the semi-insulating conversion is generally associated to an improvement of the mobility. SPL and SPC measurements show that the distribution of both electrically active iron and compensation ratio is homogeneous after annealing. The cooling rate was seen to influence the compensation ratio.
Homogeneity of thermally-annealed lightly Fe-doped SI InP / Avella, M.; Jimenez, J.; Fornari, R.; De la Puente, E.. - 588:(2000), pp. 111-116. (Intervento presentato al convegno 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' tenutosi a Boston, MA, USA, nel 1999).
Homogeneity of thermally-annealed lightly Fe-doped SI InP
R. FornariSupervision
;
2000-01-01
Abstract
Lightly Fe-doped semiconducting InP samples have been rendered semi-insulating by thermal annealing and subsequently studied by Hall effect, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). Hall measurement shows that the semi-insulating conversion is generally associated to an improvement of the mobility. SPL and SPC measurements show that the distribution of both electrically active iron and compensation ratio is homogeneous after annealing. The cooling rate was seen to influence the compensation ratio.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
