A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterization showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 108 Ω cm and mobilities in the range 3000-4000 cm2/Vs. The PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace.
Uniformity of Fe-diffused semi-insulating InP wafers / Fornari, R.; Gorog, T.; Jimenez, J.; de la Puente, E.; Grant, I.; Brozel, M.; Nicholls, M.. - (1999), pp. 259-262. (Intervento presentato al convegno 11th International Conference on Indium Phosphide and Related Materials (IPRM) tenutosi a Davos, Switzerland nel 1999).
Uniformity of Fe-diffused semi-insulating InP wafers
R. Fornari
Data Curation
;
1999-01-01
Abstract
A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterization showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 108 Ω cm and mobilities in the range 3000-4000 cm2/Vs. The PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
