InP bulk crystals double-doped with Cd and S were investigated in depth by scanning electron microscopy, transmission electron microscopy, and X-ray topography. The investigations confirm that InP:(CdS) presents a lower dislocation density than other n-type material with the same carrier concentration but that it contains two additional microdefects, namely, large and small precipitates that are seen to pin the dislocation lines and to prevent their propagation. The bigger particles appear to be crystalline CdS. The nature of the small particles is not clear.
LEC growth and structural characterization of low-EPD co-doped indium phosphide / Fornari, R.; Franzosi, P.; Kumar, J.; Salviati, G.. - (1990), pp. 238-241. (Intervento presentato al convegno Second International Conference on Indium Phosphide and Related Materials tenutosi a Denver, CO, USA, nel 1990) [10.1109/iciprm.1990.203067].
LEC growth and structural characterization of low-EPD co-doped indium phosphide
Fornari R.
Writing – Review & Editing
;
1990-01-01
Abstract
InP bulk crystals double-doped with Cd and S were investigated in depth by scanning electron microscopy, transmission electron microscopy, and X-ray topography. The investigations confirm that InP:(CdS) presents a lower dislocation density than other n-type material with the same carrier concentration but that it contains two additional microdefects, namely, large and small precipitates that are seen to pin the dislocation lines and to prevent their propagation. The bigger particles appear to be crystalline CdS. The nature of the small particles is not clear.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
