Semi-insulating (SI) InP substrates from various producers have been studied by the Hall technique, X-ray diffraction, laser scattering tomography and photoluminescence. The detection performances of radiation detectors fabricated from selected materials were tested using a 60 keV photon source (241Am). High Hall mobility, low dislocation and precipitation density have been observed in the substrate with low Fe content, which also gave the best detector performances. Its SI properties seem to be controlled by native defects.
|Titolo:||On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication|
|Data di pubblicazione:||2000|
|Appare nelle tipologie:||4.1b Atto convegno Volume|