On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

Korytar, D.; Ferrari, C.; Surma, B.; Strzelecka, S.; Dubecky, F.; Huran, J.; Fornari, R.; Pekarek, L.; Prochazkova, O.; Smatko, V.; Hruban, A.

doi:10.1109/SIM.2000.939223

Semi-insulating (SI) InP substrates from various producers have been studied by the Hall technique, X-ray diffraction, laser scattering tomography and photoluminescence. The detection performances of radiation detectors fabricated from selected materials were tested using a 60 keV photon source (241Am). High Hall mobility, low dislocation and precipitation density have been observed in the substrate with low Fe content, which also gave the best detector performances. Its SI properties seem to be controlled by native defects.

Titolo:	On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication
Autori:	Korytar D. Ferrari C. Surma B. Strzelecka S. Dubecky F. Huran J. FORNARI, Roberto Pekarek L. Prochazkova O. Smatko V. Hruban A. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2000
Handle:	http://hdl.handle.net/11381/2886894
ISBN:	0-7803-5814-7
Appare nelle tipologie:	4.1b Atto convegno Volume

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