Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.
Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces / Phillips, L. C.; Lombardo, Antonella; Ghidini, Massimo; Yan, W.; Kar Narayan, S.; Hämäläinen, S. J.; Barbone, M.; Milana, S.; Van Dijken, S.; Ferrari, A. C.; Mathur, N. D.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 108:11(2016), p. 112405. [10.1063/1.4942778]
Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces
LOMBARDO, ANTONELLA;GHIDINI, Massimo;
2016-01-01
Abstract
Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
