In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950- 2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples.

High temperature variable range hopping in heavy Al implanted 4H-SiC / Parisini, Antonella; Parisini, Andrea; Gorni, Marco; Nipoti, Roberta. - 858:(2016), pp. 283-286. ((Intervento presentato al convegno 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 tenutosi a ita nel 2015 [10.4028/www.scientific.net/MSF.858.283].

High temperature variable range hopping in heavy Al implanted 4H-SiC

PARISINI, Antonella;
2016-01-01

Abstract

In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950- 2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples.
High temperature variable range hopping in heavy Al implanted 4H-SiC / Parisini, Antonella; Parisini, Andrea; Gorni, Marco; Nipoti, Roberta. - 858:(2016), pp. 283-286. ((Intervento presentato al convegno 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 tenutosi a ita nel 2015 [10.4028/www.scientific.net/MSF.858.283].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2814670
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