We present a comprehensive study of the electrical properties of bulk polycrystalline BiFe0.5Mn0.5O3, a double perovskite synthesized in high pressure and high temperature (HP/HT) conditions. BiFe0.5Mn0.5O3 shows an antiferromagnetic character with TN = 288 K overlapped to an intrinsic antiferroelectricity due to the Bi3+ stereochemical effect. Beyond this, the observation of a semiconductor-insulator transition at TP ≈ 140 K allows to define three distinct temperature ranges with completely different electrical properties. For T > TN electric transport follows an ordinary thermally activated Arrhenius behavior; the system behaves as a paramagnetic semiconductor. At intermediate temperatures (TP < T < TN), the electric transport is best described by the Mott’s Variable Range Hopping model (M-VRH) with lowered dimensionality D = 1, stabilized by the magnetic ordering process and driven by the inhomogeneity of the sample on the B-site of the perovskite. Finally, for T < TP, the material becomes a dielectric insulator showing very unusual poling-induced soft ferroelectricity with high saturation polarization, similar to the parent compound BiFeO3. Under external electrical poling, the system irreversibly evolves from antiferroelectric to polar arrangement.

Poling-written ferroelectricity and transport properties of the bulk multiferroic perovskite BiFe0.5Mn0.5O3 / Delmonte, Davide; Mezzadri, Francesco; Gilioli, E.; Solzi, Massimo; Calestani, Gianluca; Bolzoni, Fulvio; Cabassi, R.. - In: INORGANIC CHEMISTRY. - ISSN 0020-1669. - 55:12(2016), pp. 6308-6314. [10.1021/acs.inorgchem.6b00961]

Poling-written ferroelectricity and transport properties of the bulk multiferroic perovskite BiFe0.5Mn0.5O3

DELMONTE, Davide;MEZZADRI, Francesco;SOLZI, Massimo;CALESTANI, Gianluca;BOLZONI, Fulvio;
2016-01-01

Abstract

We present a comprehensive study of the electrical properties of bulk polycrystalline BiFe0.5Mn0.5O3, a double perovskite synthesized in high pressure and high temperature (HP/HT) conditions. BiFe0.5Mn0.5O3 shows an antiferromagnetic character with TN = 288 K overlapped to an intrinsic antiferroelectricity due to the Bi3+ stereochemical effect. Beyond this, the observation of a semiconductor-insulator transition at TP ≈ 140 K allows to define three distinct temperature ranges with completely different electrical properties. For T > TN electric transport follows an ordinary thermally activated Arrhenius behavior; the system behaves as a paramagnetic semiconductor. At intermediate temperatures (TP < T < TN), the electric transport is best described by the Mott’s Variable Range Hopping model (M-VRH) with lowered dimensionality D = 1, stabilized by the magnetic ordering process and driven by the inhomogeneity of the sample on the B-site of the perovskite. Finally, for T < TP, the material becomes a dielectric insulator showing very unusual poling-induced soft ferroelectricity with high saturation polarization, similar to the parent compound BiFeO3. Under external electrical poling, the system irreversibly evolves from antiferroelectric to polar arrangement.
2016
Poling-written ferroelectricity and transport properties of the bulk multiferroic perovskite BiFe0.5Mn0.5O3 / Delmonte, Davide; Mezzadri, Francesco; Gilioli, E.; Solzi, Massimo; Calestani, Gianluca; Bolzoni, Fulvio; Cabassi, R.. - In: INORGANIC CHEMISTRY. - ISSN 0020-1669. - 55:12(2016), pp. 6308-6314. [10.1021/acs.inorgchem.6b00961]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2807211
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