We use Raman spectroscopy to characterize thin films of pentacene grown on Si/SiOx by Supersonic Molecular Beam Deposition (SuMBD). We find that films up to a thickness of about 781 Å (~ 52 monolayers) all belong to the so-called thin-film (TF) phase. The appearance with strong intensity of some lattice phonons suggests that the films are characterized by good intra-layer order. A comparison of the Raman spectra in the lattice and CH bending spectral regions of the TF polymorph with the corresponding ones of the high-temperature (HT) and low-temperature (LT) bulk pentacene polymorphs provides a quick and nondestructive method to identify the different phases.
Raman identification of polymorphs in pentacene films / Girlando, Alberto; Masino, Matteo; Brillante, Aldo; Toccoli, Tullio; Iannotta, Salvatore. - In: CRYSTALS. - ISSN 2073-4352. - 6:4(2016), p. 41. [10.3390/cryst6040041]
Raman identification of polymorphs in pentacene films
GIRLANDO, Alberto;MASINO, Matteo;
2016-01-01
Abstract
We use Raman spectroscopy to characterize thin films of pentacene grown on Si/SiOx by Supersonic Molecular Beam Deposition (SuMBD). We find that films up to a thickness of about 781 Å (~ 52 monolayers) all belong to the so-called thin-film (TF) phase. The appearance with strong intensity of some lattice phonons suggests that the films are characterized by good intra-layer order. A comparison of the Raman spectra in the lattice and CH bending spectral regions of the TF polymorph with the corresponding ones of the high-temperature (HT) and low-temperature (LT) bulk pentacene polymorphs provides a quick and nondestructive method to identify the different phases.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
