An assembly to grow III-nitride-volume crystals consists of a heat source (16) surrounding a quartz cylinder (17) within which a vertical reactor (100) is located. The vertical reactor has an evaporation cell (200) and a rotating substrate (5) in a holder (9). The vertical reactor has process gas feed ducts (3, 6). A macerating gas outlet (7) is located either above or below the substrate and a metal vapour (201) outlet (40). The macerating agent reaches the substrate vertically via the gas outlet (7). The metal vapour reaches the substrate via the vapour outlet. Further claimed is a crystal growing process for III-Nitride-Volume crystals.
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen / Fornari, Roberto. - (2008).
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen
FORNARI, Roberto
2008-01-01
Abstract
An assembly to grow III-nitride-volume crystals consists of a heat source (16) surrounding a quartz cylinder (17) within which a vertical reactor (100) is located. The vertical reactor has an evaporation cell (200) and a rotating substrate (5) in a holder (9). The vertical reactor has process gas feed ducts (3, 6). A macerating gas outlet (7) is located either above or below the substrate and a metal vapour (201) outlet (40). The macerating agent reaches the substrate vertically via the gas outlet (7). The metal vapour reaches the substrate via the vapour outlet. Further claimed is a crystal growing process for III-Nitride-Volume crystals.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
