An assembly to grow III-nitride-volume crystals consists of a heat source (16) surrounding a quartz cylinder (17) within which a vertical reactor (100) is located. The vertical reactor has an evaporation cell (200) and a rotating substrate (5) in a holder (9). The vertical reactor has process gas feed ducts (3, 6). A macerating gas outlet (7) is located either above or below the substrate and a metal vapour (201) outlet (40). The macerating agent reaches the substrate vertically via the gas outlet (7). The metal vapour reaches the substrate via the vapour outlet. Further claimed is a crystal growing process for III-Nitride-Volume crystals.

Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen / Roberto, Fornari. - (2008).

Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen

FORNARI, Roberto
2008

Abstract

An assembly to grow III-nitride-volume crystals consists of a heat source (16) surrounding a quartz cylinder (17) within which a vertical reactor (100) is located. The vertical reactor has an evaporation cell (200) and a rotating substrate (5) in a holder (9). The vertical reactor has process gas feed ducts (3, 6). A macerating gas outlet (7) is located either above or below the substrate and a metal vapour (201) outlet (40). The macerating agent reaches the substrate vertically via the gas outlet (7). The metal vapour reaches the substrate via the vapour outlet. Further claimed is a crystal growing process for III-Nitride-Volume crystals.
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen / Roberto, Fornari. - (2008).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2785879
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