AlN crystals grown by physical vapour-phase transport in the presence of a SiC doping source possess n-type conductivity. The net donor concentration attains up to mid 10(17) cm(-3). The investigation reveals shallow donors forming an impurity band and acceptor-like electron traps at about 0.5 eV below the conduction band edge. Thermal electron emission from these traps is responsible for the observed n-type conductivity. The shallow donors are suggested to be due to Si atoms on Al sites. The majority of them is assumed to be compensated by deep acceptors in the lower half of the band gap.
n-type conductivity in sublimation-grown AIN bulk crystals / T., Schulz; K., Irmscher; M., Albrecht; C., Hartmann; J., Wollweber; Fornari, Roberto. - In: PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS. - ISSN 1862-6254. - 1:(2007), pp. 147-149. [10.1002/pssr.200701078]
n-type conductivity in sublimation-grown AIN bulk crystals
FORNARI, Roberto
2007-01-01
Abstract
AlN crystals grown by physical vapour-phase transport in the presence of a SiC doping source possess n-type conductivity. The net donor concentration attains up to mid 10(17) cm(-3). The investigation reveals shallow donors forming an impurity band and acceptor-like electron traps at about 0.5 eV below the conduction band edge. Thermal electron emission from these traps is responsible for the observed n-type conductivity. The shallow donors are suggested to be due to Si atoms on Al sites. The majority of them is assumed to be compensated by deep acceptors in the lower half of the band gap.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
