A vertical liquid-delivery metal-organic chemical vapour deposition (MO-CVD) reactor was used to deposit Bi4Ti3O12 films on SrTiO3(100) substrates. Depending on the growth conditions the films show a pure Bi4Ti3O12 phase or additionally a Bi poor phase. Well-ordered, (001)oriented, epitaxially grown Bi4Ti3O12 films were obtained at a growth temperature of 700 degrees C, a Bi excess of 25%, and a substrate rotation between 500 and 750 rpm. The Bi deficiency can be influenced by the concentration of MO precursor in the liquid solution. Depositions on NdGaO3(110) also result in epitaxial (001)-oriented Bi4Ti3O12 films, but the structural quality was slightly poorer. (c) 2007 Elsevier B.V. All rights reserved.
Deposition of bismuth-titanate films with liquid-delivery spin MO-CVD / J., Schwarzkopf; R., Dirsyte; M., Rossberg; G., Wagner; Fornari, Roberto. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - 144:(2007), pp. 132-137. [10.1016/j.mseb.2007.07.065]
Deposition of bismuth-titanate films with liquid-delivery spin MO-CVD
FORNARI, Roberto
2007-01-01
Abstract
A vertical liquid-delivery metal-organic chemical vapour deposition (MO-CVD) reactor was used to deposit Bi4Ti3O12 films on SrTiO3(100) substrates. Depending on the growth conditions the films show a pure Bi4Ti3O12 phase or additionally a Bi poor phase. Well-ordered, (001)oriented, epitaxially grown Bi4Ti3O12 films were obtained at a growth temperature of 700 degrees C, a Bi excess of 25%, and a substrate rotation between 500 and 750 rpm. The Bi deficiency can be influenced by the concentration of MO precursor in the liquid solution. Depositions on NdGaO3(110) also result in epitaxial (001)-oriented Bi4Ti3O12 films, but the structural quality was slightly poorer. (c) 2007 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
