Low temperature steady-state solution growth of silicon from indium on Si(001) substrates with a vertical stack of feeding source, solution, and substrate in top down position is demonstrated. The equipment especially designed for this task is presented. By applying different heating strategies the vertical temperature difference in the crucible wall is adjusted to meet the demands of the three stages of processing, that is, Si dissolution and homogenization, growth, and recycling of the solute. Heating from either the bottom or sides results in a temperature difference that should be suitable for growth. However, only for side heating growth has been observed. In order to understand this effect, numerical modeling of heat transfer and fluid flow has been performed. Heating from the side initiates a flow path, which allows both effective saturation of solvent at the feeding source and significant supersaturation at the substrate. In this case the epitaxial growth of pyramids with I I I I) facets on Si(001) substrates occurs. In contrast, heating from the bottom does not result in supersaturation strong enough for growth.
Equipment for low temperature steady-state growth of silicon from metallic solutions / T. Teubner;R. Heimburger;K. Bottcher;T. Boeck;R. Fornari. - In: CRYSTAL GROWTH & DESIGN. - ISSN 1528-7483. - 8(2008), pp. 2484-2488. [10.1021/cg800120q]
|Tipologia ministeriale:||Articolo su rivista|
|Appare nelle tipologie:||1.1 Articolo su rivista|