As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10(7) Omega cm and mobility in the range 3000-4000 cm(2)/Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SILEC indium phosphide.
Semi-insulating InP wafers obtained by Fe-diffusion / Fornari, Roberto; J., Jimenez; M., Avella. - STAMPA. - (2005), pp. 649-652. (Intervento presentato al convegno 17th Intern. Conf. on InP and related materials tenutosi a Glasgow nel 2005).
Semi-insulating InP wafers obtained by Fe-diffusion
FORNARI, Roberto;
2005-01-01
Abstract
As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10(7) Omega cm and mobility in the range 3000-4000 cm(2)/Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SILEC indium phosphide.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.