As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10(7) Omega cm and mobility in the range 3000-4000 cm(2)/Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SILEC indium phosphide.
Semi-insulating InP wafers obtained by Fe-diffusion / Fornari, R., J., J., M., A.. - STAMPA. - (2005), pp. 649-652. (17th Intern. Conf. on InP and related materials Glasgow 2005).
Semi-insulating InP wafers obtained by Fe-diffusion
FORNARI, Roberto;
2005-01-01
Abstract
As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10(7) Omega cm and mobility in the range 3000-4000 cm(2)/Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SILEC indium phosphide.File in questo prodotto:
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