As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10(7) Omega cm and mobility in the range 3000-4000 cm(2)/Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SILEC indium phosphide.

Semi-insulating InP wafers obtained by Fe-diffusion / Fornari, Roberto; J., Jimenez; M., Avella. - STAMPA. - (2005), pp. 649-652. (Intervento presentato al convegno 17th Intern. Conf. on InP and related materials tenutosi a Glasgow nel 2005).

Semi-insulating InP wafers obtained by Fe-diffusion

FORNARI, Roberto;
2005-01-01

Abstract

As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10(7) Omega cm and mobility in the range 3000-4000 cm(2)/Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SILEC indium phosphide.
2005
0780388925
Semi-insulating InP wafers obtained by Fe-diffusion / Fornari, Roberto; J., Jimenez; M., Avella. - STAMPA. - (2005), pp. 649-652. (Intervento presentato al convegno 17th Intern. Conf. on InP and related materials tenutosi a Glasgow nel 2005).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2683979
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