We show results of temperature-dependent reverse-bias step-stressing of normally-off high-power GaN FETs. In the range 250–350 K, the stress voltage at which the FETs fail catastrophically does not show a clear temperature dependence, while some correlation is observed with the initial leakage current value. Our results, consistent with other published reports, point to the activation of a deep gate-to-drain leakage path as the responsible for fatal device degradation at large values of the drain–gate reverse bias.

Temperature-dependent reverse-bias stress of normally-off GaN power FETs / Giuliani, Francesco; Delmonte, Nicola; Cova, Paolo; Menozzi, Roberto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53:(2013), pp. 1486-1490. [10.1016/j.microrel.2013.07.068]

Temperature-dependent reverse-bias stress of normally-off GaN power FETs

GIULIANI, Francesco;DELMONTE, Nicola;COVA, Paolo;MENOZZI, Roberto
2013-01-01

Abstract

We show results of temperature-dependent reverse-bias step-stressing of normally-off high-power GaN FETs. In the range 250–350 K, the stress voltage at which the FETs fail catastrophically does not show a clear temperature dependence, while some correlation is observed with the initial leakage current value. Our results, consistent with other published reports, point to the activation of a deep gate-to-drain leakage path as the responsible for fatal device degradation at large values of the drain–gate reverse bias.
Temperature-dependent reverse-bias stress of normally-off GaN power FETs / Giuliani, Francesco; Delmonte, Nicola; Cova, Paolo; Menozzi, Roberto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53:(2013), pp. 1486-1490. [10.1016/j.microrel.2013.07.068]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2650065
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