This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT devices and circuits for power switching applications, and shows how thermal modeling can assist manufacturing and design all the way from the semiconductor to the hybrid power converter.
GaN HEMTs for power switching applications: from device to system-level electro-thermal modeling / Giuliani, Francesco; Delmonte, Nicola; Cova, Paolo; Menozzi, Roberto. - STAMPA. - (2013), pp. 215-218. ( 2013 CSManTech, International Conference on Compound SemiconductorMANufactoring TEChnology New Orleans, Louisiana (USA) 13-16 maggio 2013).
GaN HEMTs for power switching applications: from device to system-level electro-thermal modeling
GIULIANI, Francesco;DELMONTE, Nicola;COVA, Paolo;MENOZZI, Roberto
2013-01-01
Abstract
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT devices and circuits for power switching applications, and shows how thermal modeling can assist manufacturing and design all the way from the semiconductor to the hybrid power converter.File in questo prodotto:
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