This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT devices and circuits for power switching applications, and shows how thermal modeling can assist manufacturing and design all the way from the semiconductor to the hybrid power converter.
GaN HEMTs for power switching applications: from device to system-level electro-thermal modeling / Giuliani, Francesco; Delmonte, Nicola; Cova, Paolo; Menozzi, Roberto. - STAMPA. - (2013), pp. 215-218. (Intervento presentato al convegno 2013 CSManTech, International Conference on Compound SemiconductorMANufactoring TEChnology tenutosi a New Orleans, Louisiana (USA) nel 13-16 maggio 2013).
GaN HEMTs for power switching applications: from device to system-level electro-thermal modeling
GIULIANI, Francesco;DELMONTE, Nicola;COVA, Paolo;MENOZZI, Roberto
2013-01-01
Abstract
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT devices and circuits for power switching applications, and shows how thermal modeling can assist manufacturing and design all the way from the semiconductor to the hybrid power converter.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
