The authors for the first time present results of hot electron stressing of InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). High drain bias, room temperature stress cycles have been applied to 0.3 μm, SiN-passivated, lattice-matched devices, and the changes of the DC and RF (up to 50 GHz) characteristics have been studied. Both the DC and RF device gain degrade after stressing; the effect of the stress on the unity current gain cutoff frequency fT is studied under different bias conditions. Results indicate that surface degradation may be responsible for the observed changes
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT’s / Menozzi, Roberto; M., Borgarino; Y., Baeyens; M., Van Hove; F., Fantini. - In: IEEE MICROWAVE AND GUIDED WAVE LETTERS. - ISSN 1051-8207. - 7:(1997), pp. 3-5. [10.1109/75.553702]
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT’s
MENOZZI, Roberto;
1997-01-01
Abstract
The authors for the first time present results of hot electron stressing of InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). High drain bias, room temperature stress cycles have been applied to 0.3 μm, SiN-passivated, lattice-matched devices, and the changes of the DC and RF (up to 50 GHz) characteristics have been studied. Both the DC and RF device gain degrade after stressing; the effect of the stress on the unity current gain cutoff frequency fT is studied under different bias conditions. Results indicate that surface degradation may be responsible for the observed changes| File | Dimensione | Formato | |
|---|---|---|---|
|
00553702.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
343.99 kB
Formato
Adobe PDF
|
343.99 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
