The authors for the first time present results of hot electron stressing of InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). High drain bias, room temperature stress cycles have been applied to 0.3 μm, SiN-passivated, lattice-matched devices, and the changes of the DC and RF (up to 50 GHz) characteristics have been studied. Both the DC and RF device gain degrade after stressing; the effect of the stress on the unity current gain cutoff frequency fT is studied under different bias conditions. Results indicate that surface degradation may be responsible for the observed changes
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