A coupled numerical-experimental approach for the design of power p-i-n diodes for snubberless applications was described. The different proton irradiation profiles were numerically evaluated with an efficient procedure based on simple measurements performed on a few samples. The evaluation of the irradiation profiles was done to extract indications on the optimum trade-off among switching speed, recovery softness and oscillation damping.
Power p–i–n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery / Cova, Paolo; Menozzi, Roberto; M., Portesine. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 43:(2003), pp. 81-87. [10.1016/S0026-2714(02)00268-8]
Power p–i–n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery
COVA, Paolo;MENOZZI, Roberto;
2003-01-01
Abstract
A coupled numerical-experimental approach for the design of power p-i-n diodes for snubberless applications was described. The different proton irradiation profiles were numerically evaluated with an efficient procedure based on simple measurements performed on a few samples. The evaluation of the irradiation profiles was done to extract indications on the optimum trade-off among switching speed, recovery softness and oscillation damping.| File | Dimensione | Formato | |
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