The reliability of high power AlGaAs/InGaAs/GaAs PHEMTs has been investigated. The influences of high temperature and of elevated drain voltage have been studied separately, using long term operation at elevated temperature and a 23-hour drain-voltage step-stress at room temperature. Results pertaining to different combinations of gate length and gate-drain ledge are reported and discussed, indicating safe operation values and showing that a wider gate-drain recess increases the device reliability.
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths / Cova, Paolo; Menozzi, Roberto; M., Dammann; T., Feltgen; W., Jantz. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 42:(2002), pp. 1587-1592. [10.1016/S0026-2714(02)00195-6]
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths
COVA, Paolo;MENOZZI, Roberto;
2002-01-01
Abstract
The reliability of high power AlGaAs/InGaAs/GaAs PHEMTs has been investigated. The influences of high temperature and of elevated drain voltage have been studied separately, using long term operation at elevated temperature and a 23-hour drain-voltage step-stress at room temperature. Results pertaining to different combinations of gate length and gate-drain ledge are reported and discussed, indicating safe operation values and showing that a wider gate-drain recess increases the device reliability.| File | Dimensione | Formato | |
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