In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.

Study of the high frequency dielectric properties of SrBi2Ta2O9 ferroelectric thin films / Delmonte, Nicola; Watts, B; Leccabue, F; Cova, Paolo; Chiorboli, Giovanni. - STAMPA. - 514-516:(2006), pp. 259-263. ((Intervento presentato al convegno Proceedings of the III International Materials Symposium Materiais 2005 and XII Encontro da Sociedade Portuguesa de Materiais –SPM tenutosi a Aveiro, Portugal nel March 20-23, 2005 [10.4028/www.scientific.net/MSF.514-516.259].

Study of the high frequency dielectric properties of SrBi2Ta2O9 ferroelectric thin films

DELMONTE, Nicola;COVA, Paolo;CHIORBOLI, Giovanni
2006-01-01

Abstract

In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.
978-0-87849-402-6
Study of the high frequency dielectric properties of SrBi2Ta2O9 ferroelectric thin films / Delmonte, Nicola; Watts, B; Leccabue, F; Cova, Paolo; Chiorboli, Giovanni. - STAMPA. - 514-516:(2006), pp. 259-263. ((Intervento presentato al convegno Proceedings of the III International Materials Symposium Materiais 2005 and XII Encontro da Sociedade Portuguesa de Materiais –SPM tenutosi a Aveiro, Portugal nel March 20-23, 2005 [10.4028/www.scientific.net/MSF.514-516.259].
File in questo prodotto:
File Dimensione Formato  
Reprint MaterialScienceForum_2006.pdf

non disponibili

Tipologia: Documento in Post-print
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 340.42 kB
Formato Adobe PDF
340.42 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2295579
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact